18556460. THIN FILM TRANSISTORS FOR CIRCUITS FOR USE IN DISPLAY DEVICES simplified abstract (Applied Materials, Inc.)
Contents
THIN FILM TRANSISTORS FOR CIRCUITS FOR USE IN DISPLAY DEVICES
Organization Name
Inventor(s)
Dong Kil Yim of Pleasanton CA (US)
Soo Young Choi of Fremont CA (US)
Jung Bae Kim of San Jose CA (US)
THIN FILM TRANSISTORS FOR CIRCUITS FOR USE IN DISPLAY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18556460 titled 'THIN FILM TRANSISTORS FOR CIRCUITS FOR USE IN DISPLAY DEVICES
The abstract describes a device with a driving thin film transistor that includes a metal oxide channel, a source electrode in contact with the metal oxide channel, and a top gate electrode connected to the source electrode.
- The driving thin film transistor features a metal oxide channel, source electrode, and top gate electrode.
- The source electrode is in contact with the metal oxide channel.
- The top gate electrode is physically connected to the source electrode.
Potential Applications: - This technology could be used in display panels, sensors, and other electronic devices requiring thin film transistors.
Problems Solved: - Provides a more efficient and reliable driving thin film transistor design. - Enhances the performance of electronic devices utilizing thin film transistors.
Benefits: - Improved functionality and performance of electronic devices. - Increased reliability and efficiency in driving thin film transistors.
Commercial Applications: - Display panels, sensors, and other electronic devices could benefit from the enhanced performance of this driving thin film transistor technology.
Questions about the driving thin film transistor technology: 1. How does the metal oxide channel improve the performance of the thin film transistor? 2. What are the potential drawbacks of using a top gate electrode in this design?
Original Abstract Submitted
Disclosed herein is a device including a driving thin film transistor. The driving thin film transistor includes a metal oxide channel, a source electrode in contact with the driving metal oxide channel, and a top gate electrode disposed above the metal oxide channel and physically connected to the driving source electrode.
