18554921. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18554921 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of a SiC substrate with various layers on top, including an AlN nucleation layer, an AlGaN buffer layer, a GaN channel layer, and an AlGaN barrier layer. Electrodes are also present on top of the barrier layer.
- The AlGaN buffer layer has a decreasing Al composition ratio from the SiC substrate towards the GaN channel layer.
- The thickness of the AlN nucleation layer is equal to or less than 30 nm.
Potential Applications: - Power electronics - High-frequency communication devices - LED lighting
Problems Solved: - Improved performance and efficiency of semiconductor devices - Enhanced thermal management
Benefits: - Higher power handling capabilities - Better heat dissipation - Increased device reliability
Commercial Applications: Title: Advanced Semiconductor Devices for Power Electronics This technology can be utilized in industries such as power electronics, telecommunications, and lighting, leading to more efficient and reliable devices.
Prior Art: Readers can explore prior research on SiC-based semiconductor devices, AlN nucleation layers, and AlGaN buffer layers to understand the evolution of this technology.
Frequently Updated Research: Researchers are continuously studying the optimization of AlGaN buffer layers and the integration of different materials in semiconductor devices for enhanced performance.
Questions about the technology: 1. What are the potential challenges in scaling up the production of semiconductor devices with these advanced layers? 2. How does the presence of the AlN nucleation layer impact the overall performance of the device?
Original Abstract Submitted
A semiconductor device according to the present disclosure includes a SiC substrate, an AlN nucleation layer provided on the SiC substrate, an AlGaN buffer layer provided on the AlN nucleation layer, a GaN channel layer provided on the AlGaN buffer layer, an AlGaN barrier layer provided on the GaN channel layer and a drain electrode, a source electrode, and a gate electrode each provided above the AlGaN barrier layer, wherein the AlGaN buffer layer has an Al composition ratio decreasing from the SiC substrate toward the GaN channel layer, and a thickness of the AlN nucleation layer is less than or equal to 30 nm.
