18554225. ETCHING METHOD AND PROCESSING DEVICE simplified abstract (Tokyo Electron Limited)

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ETCHING METHOD AND PROCESSING DEVICE

Organization Name

Tokyo Electron Limited

Inventor(s)

Toshio Hasegawa of Nirasaki City, Yamanashi (JP)

ETCHING METHOD AND PROCESSING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18554225 titled 'ETCHING METHOD AND PROCESSING DEVICE

The patent application describes a method for etching a metal on a substrate using a two-step process involving halogen-containing gas and a gas containing carbon and oxygen.

  • Expose the metal to a halogen-containing gas to create a halide-containing surface layer.
  • Expose the halide-containing surface layer to a gas containing carbon and oxygen to remove the halide-containing layer.
  • Repeat the above steps in the stated order.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Metal etching processes

Problems Solved: - Efficient removal of metal layers - Precision etching of metals on substrates

Benefits: - Improved etching accuracy - Reduced process time - Cost-effective metal etching solution

Commercial Applications: - Metal etching equipment and services for semiconductor companies - Manufacturing tools for microelectronics industry

Questions about Metal Etching Method: 1. How does this method compare to traditional metal etching techniques? 2. What are the environmental implications of using halogen-containing gases in the process?

Frequently Updated Research: - Ongoing studies on optimizing the etching process for different types of metals and substrates.


Original Abstract Submitted

Provided is a method for etching a metal on a substrate, the etching method including (a) a step for exposing the metal to a halogen-containing gas and modifying a surface layer of the metal to be a halide-containing surface layer, (b) a step for exposing the halide-containing surface layer to a gas that contains carbon (C) and oxygen (O) and removing the halide-containing surface layer, and (c) a step for repeating the (a) step and the (b) step in the stated order.