18554032. METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Ferroelectric-based 3-Dimensional Flash Memory
- 1.13 Original Abstract Submitted
METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
Organization Name
Inventor(s)
Yunheub Song of SUWON-SI, GYEONGGI-DO (KR)
CHANGHWAN Choi of SUWON-SI, GYEONGGI-DO (KR)
JAEMIN Sim of SUWON-SI, GYEONGGI-DO (KR)
METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18554032 titled 'METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
Simplified Explanation
This patent application discloses a method for manufacturing a 3-dimensional flash memory based on ferroelectric materials, as well as a flash memory design that enhances ferroelectric polarization properties.
Key Features and Innovation
- Method for manufacturing a 3-dimensional flash memory using ferroelectric materials.
- Improved ferroelectric polarization properties in the flash memory design.
- Innovative approach to enhancing memory performance and reliability.
Potential Applications
The technology can be applied in the semiconductor industry for developing advanced memory storage devices with improved performance.
Problems Solved
The technology addresses the need for more efficient and reliable memory storage solutions by enhancing ferroelectric polarization properties.
Benefits
- Enhanced memory performance.
- Improved reliability of memory storage devices.
- Potential for increased data storage capacity.
Commercial Applications
- Semiconductor industry for manufacturing advanced memory storage devices.
- Consumer electronics for developing high-performance data storage solutions.
Prior Art
Readers can explore prior research on ferroelectric materials in memory storage devices to understand the evolution of this technology.
Frequently Updated Research
Stay updated on the latest advancements in ferroelectric-based memory technologies to leverage the most recent innovations in the field.
Questions about Ferroelectric-based 3-Dimensional Flash Memory
What are the key advantages of using ferroelectric materials in memory storage devices?
Ferroelectric materials offer fast switching speeds and low power consumption, making them ideal for high-performance memory applications.
How does the 3-dimensional flash memory design enhance ferroelectric polarization properties?
The 3-dimensional architecture allows for more efficient utilization of ferroelectric materials, leading to improved polarization properties and memory performance.
Original Abstract Submitted
A method of manufacturing a ferroelectric-based 3-dimensional flash memory is disclosed. Also, a 3-dimensional flash memory that improves ferroelectric polarization properties and a method of manufacturing the same are disclosed.
