18553151. INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT simplified abstract (The Regents of the University of California)

INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT

Organization Name

The Regents of the University of California

Inventor(s)

Yongjie Hu of Los Angeles CA (US)

INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18553151 titled 'INTEGRATION OF BORON ARSENIDE INTO POWER DEVICES AND SEMICONDUCTORS FOR THERMAL MANAGEMENT

The present embodiments focus on integrating boron arsenide (BAs) and boron phosphide (BP) into various semiconductor devices and electronics, including with different semiconductors, metals, wide-bandgap materials, ultrawide-bandgap materials, HEMT devices, and power devices for high-performance thermal management.

• Experimental integration and atomic structural characterization of GaN-on-BAs structure for passive cooling of GaN devices.
• High thermal boundary conductance of 250 MW/m2K measured in the integrated structure.
• Substantially reduced hot spot temperature in operating AlGaN/GaN HEMT devices when using BAs as a cooling substrate.

Potential Applications: - Semiconductor devices - Electronics - Optoelectronics - Photonics - Power devices for high-performance thermal management

Problems Solved: - Improved thermal management in semiconductor devices - Enhanced performance and reliability of GaN devices - Addressing hot spot temperature issues in HEMT devices

Benefits: - Increased efficiency and longevity of semiconductor devices - Enhanced thermal conductivity for better performance - Improved reliability and stability of electronics

Commercial Applications: Title: Advanced Thermal Management Solutions for Semiconductor Devices This technology can be utilized in various industries such as telecommunications, aerospace, automotive, and consumer electronics for improved thermal management in semiconductor devices.

Prior Art: There is limited prior art related to the integration of boron arsenide and boron phosphide into semiconductor devices for thermal management purposes.

Frequently Updated Research: Ongoing research focuses on optimizing the integration process and exploring new applications for BAs and BP in semiconductor technologies.

Questions about the Integration of Boron Arsenide and Boron Phosphide: 1. How does the integration of BAs and BP improve thermal management in semiconductor devices? 2. What are the potential long-term benefits of using BAs and BP in electronics and power devices?

Original Abstract Submitted

The present embodiments relate generally to the integration of boron arsenide (BAs) and boron phosphide (BP) into semiconductor devices and electronics, including with all semiconductors (Si, Ge, InP, InAs, GaAs), metals, wide-bandgap gallium nitride (GaN, AIGaN, SiC), ultrawide-bandgap (AIN, c-BN, diamond, Ga2O3), HEMT devices, electronics, optoelectronics, photonics, or any power devices for high-performance thermal management. Embodiments successfully develop the first experimental integration and atomic structural characterization of GaN-on-BAs structure for passive cooling of GaN devices, GaN/AIGaN HEMT transistors, and RF technologies, and measured a high thermal boundary conductance of 250 MW/m2K. Importantly, experimental measurement of operating AIGaN/GaN HEMT devices confirms the substantially reduced hot spot temperature and clear advantage for using BAs versus diamond or silicon carbide as cooling substrate.