18552957. FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Hiroki Murakami of Nirasaki City, Yamanashi (JP)
Shuichiro Sakai of Nirasaki City, Yamanashi (JP)
FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18552957 titled 'FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS
The film forming method described in the patent application involves forming a film on a substrate containing silicon and oxygen through a series of steps.
- Supplying a metal containing catalyst to the substrate.
- Supplying a hydrogen containing gas to the substrate.
- Supplying a silicon precursor containing silanol to the substrate.
Key Features and Innovation:
- Formation of a film on a substrate containing silicon and oxygen.
- Utilization of a metal containing catalyst in the film forming process.
- Inclusion of a hydrogen containing gas in the process.
- Use of a silicon precursor containing silanol for film formation.
Potential Applications:
- Semiconductor industry for thin film deposition.
- Solar panel manufacturing for protective coatings.
- Electronics industry for insulating layers.
Problems Solved:
- Facilitates the formation of silicon and oxygen containing films on substrates.
- Provides a method for precise control over film composition.
- Enables the creation of thin films with specific properties.
Benefits:
- Enhanced film quality and uniformity.
- Improved adhesion to the substrate.
- Increased efficiency in film formation process.
Commercial Applications:
- Thin film technology for electronic devices.
- Coatings for optical lenses.
- Protective layers for automotive components.
Prior Art:
- Researchers can explore prior patents related to thin film deposition processes involving silicon and oxygen.
Frequently Updated Research:
- Ongoing studies on optimizing film formation techniques for enhanced performance.
Questions about the Film Forming Method: 1. How does the presence of a metal containing catalyst impact the film formation process? 2. What are the advantages of using a silicon precursor containing silanol in the method?
Original Abstract Submitted
A film forming method forms a film containing at least silicon and oxygen on a substrate. The film forming method includes: a) supplying a metal containing catalyst to the substrate; b) supplying a hydrogen containing gas to the substrate; and c) supplying a silicon precursor containing silanol to the substrate.
