18551269. PHOTODETECTION DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)

PHOTODETECTION DEVICE

Organization Name

SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor(s)

Koichi Baba of Kanagawa (JP)

Taiichiro Watanabe of Kanagawa (JP)

PHOTODETECTION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18551269 titled 'PHOTODETECTION DEVICE

Simplified Explanation

The abstract describes a photodetection device that allows for flexibility in pixel layout and can be miniaturized. The device includes multiple semiconductor layers, charge accumulation sections, photoelectric conversion sections, voltage application sections, and pixel transistors.

• The photodetection device includes a first substrate with a first semiconductor layer, charge accumulation sections, and a photoelectric conversion section.
• The device also includes a second substrate with a second semiconductor layer that is bonded to the first substrate.
• A first pixel transistor is located on the second substrate and outputs a pixel signal.

Potential Applications

This technology could be used in digital cameras, smartphones, security cameras, and other imaging devices.

Problems Solved

This technology solves the problem of restrictions on pixel layout in photodetection devices, allowing for more flexibility and miniaturization.

Benefits

The benefits of this technology include improved image quality, increased device miniaturization, and enhanced performance in low-light conditions.

Potential Commercial Applications

The potential commercial applications of this technology include consumer electronics, surveillance systems, medical imaging devices, and industrial inspection equipment.

Possible Prior Art

One possible prior art for this technology could be the development of photodetection devices with fixed pixel layouts and limited miniaturization capabilities.

How does this technology compare to existing photodetection devices in terms of performance and cost?

This article does not provide a direct comparison between this technology and existing photodetection devices. Further research and testing would be needed to determine the performance and cost differences.

What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges in scaling up production of this technology for commercial applications. Factors such as manufacturing costs, production efficiency, and market demand would need to be considered.

Original Abstract Submitted

A photodetection that alleviates restrictions on a pixel layout in each pixel and capable of being miniaturized is provided. A photodetection device as provided includes a first substrate including a first semiconductor layer with a first surface and a second surface on a side opposite to the first surface, first and second charge accumulation sections provided on the first surface side, a first photoelectric conversion section in the first semiconductor layer, and first and second voltage application sections that apply a voltage to the first semiconductor layer between the first and second charge accumulation sections and the first photoelectric conversion section, and a second substrate including a second semiconductor layer with a third surface and a fourth surface on a side opposite to the third surface and is bonded to the first substrate, and a first pixel transistor on the third or fourth surface that outputs a pixel signal.