18551251. SEMICONDUCTOR DEVICE simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
Keita Takeuchi of Kanagawa (JP)
Satoshi Yamamoto of Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18551251 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a stack with a semiconductor substrate, an opening filled with an insulating material, a pad electrode at the bottom of the opening, a wiring layer overlapping the opening, and a through electrode extending from the opposite surface of the stack.
- The semiconductor device includes a stack with various components such as a semiconductor substrate, an opening filled with insulating material, a pad electrode, a wiring layer, and a through electrode.
- The wiring layer is electrically connected to the pad electrode and overlaps the opening in the stack.
- The through electrode extends from the second surface of the stack and is located in a different planar region from the opening.
Potential Applications
The technology described in this patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the electrical connectivity and signal transmission within semiconductor devices by providing efficient wiring and electrode structures.
Benefits
The benefits of this technology include enhanced performance, increased reliability, and improved functionality of semiconductor devices.
Potential Commercial Applications
The technology could be utilized in the manufacturing of advanced electronic devices for consumer electronics, telecommunications, automotive, and industrial applications.
Possible Prior Art
One possible prior art could be the use of through-silicon vias (TSVs) in semiconductor devices for vertical interconnects. These TSVs provide a pathway for electrical connections through the silicon substrate.
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
Answer: This article does not provide a direct comparison with existing semiconductor device structures, leaving the reader to wonder about the specific advantages and differences.
What are the specific performance improvements achieved with this technology?
Answer: The article does not delve into the specific performance enhancements or metrics resulting from the implementation of this semiconductor device structure.
Original Abstract Submitted
Provided is a semiconductor device including a stack including a semiconductor substrate, an opening provided extending from a first surface of the stack and filled with an insulating material, a pad electrode provided at a bottom of the opening, a wiring layer provided in a planar region of the stack overlapping a planar region where the opening is provided in plan view from the first surface, the wiring layer being electrically being connected to the pad electrode, and a through electrode provided in a planar region different from the planar region where the opening is provided in the plan view and provided extending from a second surface of the stack opposite to the first surface.
