18548435. POWER MODULE WITH DETECTION OF AGING simplified abstract (Robert Bosch GmbH)

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POWER MODULE WITH DETECTION OF AGING

Organization Name

Robert Bosch GmbH

Inventor(s)

Jan Homoth of Reutlingen (DE)

Sebastian Strache of Wannweil (DE)

Josef Goeppert of Kusterdingen (DE)

POWER MODULE WITH DETECTION OF AGING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18548435 titled 'POWER MODULE WITH DETECTION OF AGING

Simplified Explanation

The power module described in the patent application includes a substrate with at least one power transistor on the lower side and at least one temperature sensor within the module. Additionally, there is at least one primary temperature sensor on the upper side or in an inner substrate layer above the power transistor, as well as at least one reference temperature sensor located away from the power transistors to provide a comparison temperature.

  • The power module includes a substrate with power transistors and temperature sensors.
  • Primary temperature sensors are situated close to the power transistors for accurate temperature measurements.
  • Reference temperature sensors are placed away from the power transistors to provide comparison temperatures.

Potential Applications

The technology described in the patent application could be applied in various industries such as automotive, aerospace, and renewable energy where power modules are used for controlling electrical systems.

Problems Solved

This innovation solves the problem of accurately measuring the temperature of power transistors within a module and provides a reference temperature for detecting resistance changes due to material aging.

Benefits

The benefits of this technology include improved thermal management, increased efficiency, and enhanced reliability of power modules.

Potential Commercial Applications

The technology could be commercialized for use in electric vehicles, solar inverters, and industrial motor drives.

Possible Prior Art

One possible prior art could be the use of separate temperature sensors for measuring the temperature of power transistors in electronic devices.

Unanswered Questions

How does this technology impact the overall performance of power modules?

The article does not delve into the specific performance enhancements or changes that this technology may bring about in power modules.

Are there any limitations to the implementation of this technology in different environments?

The article does not address any potential limitations or challenges that may arise when implementing this technology in various operating conditions or environments.


Original Abstract Submitted

A power module. The power module has a substrate and at least one power transistor situated on a lower side of the substrate, and at least one temperature sensor situated in the power module. At least one primary temperature sensor is situated on an upper side opposite the at least one power transistor or in an inner substrate layer situated above the at least one power transistor. At least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors, on the upper side or on one of the inner substrate layers. As a result, the transistor temperature can be measured closer to the source of the heat and a reference temperature is provided for detecting resistance changes due to material aging.