18548165. Field-Effect Transistor and Manufacturing Method Therefor simplified abstract (Nippon Telegraph and Telephone Corporation)

Field-Effect Transistor and Manufacturing Method Therefor

Organization Name

Nippon Telegraph and Telephone Corporation

Inventor(s)

Takuya Tsutsumi of Musashino-shi, Tokyo (JP)

Hideaki Matsuzaki of Musashino-shi, Tokyo (JP)

Field-Effect Transistor and Manufacturing Method Therefor - A simplified explanation of the abstract

This abstract first appeared for US patent application 18548165 titled 'Field-Effect Transistor and Manufacturing Method Therefor

The abstract of a patent application describes a field effect transistor with two etching stop structures on opposite sides of a recess region.

• The first etching stop structure is located on one side surface of the recess region, separating a cap layer from the recess region near the source electrode.
• The second etching stop structure is situated on the other side surface of the recess region, delineating the cap layer from the recess region near the drain electrode.

• • Key Features and Innovation:**

• Presence of two etching stop structures on opposite sides of the recess region in the field effect transistor.
• First etching stop structure separates the cap layer from the recess region near the source electrode.
• Second etching stop structure separates the cap layer from the recess region near the drain electrode.

• • Potential Applications:**

• Semiconductor industry for advanced electronic devices.
• Integrated circuits and microprocessors.
• Power management systems.

• • Problems Solved:**

• Enhanced etching control during manufacturing process.
• Improved performance and reliability of the field effect transistor.

• • Benefits:**

• Increased precision in device fabrication.
• Higher efficiency and functionality of electronic components.
• Better overall performance and longevity of the transistor.

• • Commercial Applications:**

• Semiconductor manufacturing companies for producing high-performance electronic devices.
• Electronics industry for developing cutting-edge products.
• Research institutions for advancing semiconductor technology.

• • Prior Art:**

No specific information on prior art related to this technology is provided in the abstract.

• • Frequently Updated Research:**

No information on frequently updated research relevant to this technology is included in the abstract.

• • Questions about Field Effect Transistors:**

• • Question 1:** How do etching stop structures improve the performance of field effect transistors?

• • Answer:** Etching stop structures help control the etching process during manufacturing, ensuring precise alignment and reducing defects in the transistor, leading to improved performance and reliability.

• • Question 2:** What are the main differences between the first and second etching stop structures in the field effect transistor?

• • Answer:** The first etching stop structure separates the cap layer from the recess region near the source electrode, while the second etching stop structure separates the cap layer from the recess region near the drain electrode, providing distinct boundaries for etching control.

Original Abstract Submitted

A field effect transistor includes a first etching stop structure and a second etching stop structure. The first etching stop structure is formed on a first side surface of a recess region that is a boundary between a cap layer on a side of a source electrode and the recess region. The second etching stop structure is formed on a second side surface of the recess region that is a boundary between the cap layer on a side of a drain electrode and the recess region.