18547888. FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM simplified abstract (Tokyo Electron Limited)

From WikiPatents
Jump to navigation Jump to search

FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM

Organization Name

Tokyo Electron Limited

Inventor(s)

Munehito Kagaya of Nirasaki City, Yamanashi (JP)

Hiroki Murakami of Nirasaki City, Yamanashi (JP)

FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18547888 titled 'FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM

Simplified Explanation

The present disclosure describes a method for embedding a film in a recess in a substrate, where the film is formed thicker at the opening of the recess than at the bottom portion. The method involves forming the film in the recess with varying thickness and partially etching the film.

  • Explanation of the patent:
 - Forming a film in a recess with varying thickness
 - Partially etching the film
 - Multiple cycles of forming and etching the film
  • Potential applications of this technology:
 - Microelectronics
 - Optoelectronics
 - Display technologies
  • Problems solved by this technology:
 - Ensuring uniform film thickness in recesses
 - Improving film adhesion in narrow recesses
 - Enhancing optical properties of embedded films
  • Benefits of this technology:
 - Improved film quality
 - Enhanced device performance
 - Increased durability of embedded films
  • Potential commercial applications of this technology:
 - Semiconductor manufacturing
 - LED production
 - Thin-film solar cells
  • Possible prior art:
 - Prior methods of embedding films in recesses with uniform thickness
 - Techniques for etching films in microfabrication processes
      1. Unanswered Questions:
        1. How does the thickness of the film impact its optical properties?

The varying thickness of the film in the recess may affect its optical properties, such as light transmission and reflection. Further research is needed to understand the specific impact of film thickness on optical performance.

        1. What are the potential challenges in scaling up this method for mass production?

While the method described in the patent application shows promise for embedding films in recesses, there may be challenges in scaling up the process for mass production. Factors such as production speed, cost-effectiveness, and quality control need to be considered for industrial applications.


Original Abstract Submitted

An aspect of the present disclosure provides a film forming method of embedding a film in a recess that is formed in a substrate and has a narrow portion, the method comprising: an operation (a) of forming the film in the recess under a condition that the film is formed thicker at an opening than at a bottom portion of the recess; an operation (b) of forming the film in the recess under a condition that the film is formed with a same thickness at both the bottom portion of the recess and the opening of the recess, or a condition that the film is formed thicker at the bottom portion of the recess than at the opening of the recess; and an operation (c) of partially etching the film formed in the recess, wherein multiple cycles, each of which including the operation (b) and the operation (c), are performed

Retrieved from "http://wikipatents.org/index.php?title=18547888._FILM_FORMING_METHOD,_PROCESSING_APPARATUS,_AND_PROCESSING_SYSTEM_simplified_abstract_(Tokyo_Electron_Limited)&oldid=65809"