18545730. Tunneling Enabled Feedback FET simplified abstract (IMEC VZW)
Contents
Tunneling Enabled Feedback FET
Organization Name
Inventor(s)
Aryan Afzalian of Chastre (BE)
Tunneling Enabled Feedback FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 18545730 titled 'Tunneling Enabled Feedback FET
The abstract describes a patent application related to tunneling enabled feedback field effect transistors (FETs). One example system includes a feedback FET with specific characteristics such as a semiconductor material with a bandgap smaller than 0.9 eV and a dopant concentration smaller than 5x10^18 cm^-3.
- The patent application focuses on tunneling enabled feedback FETs.
- The feedback FET includes a source region, channel region, drain region, and gate.
- The semiconductor material used in the source, channel, and drain regions has specific bandgap and dopant concentration requirements.
- The gate is positioned along the channel and isolated from it.
- The innovation aims to improve the performance of FETs by utilizing tunneling effects in the feedback mechanism.
Potential Applications: - High-speed electronic devices - Low-power consumption circuits - Quantum computing technologies
Problems Solved: - Enhancing the performance of field effect transistors - Reducing power consumption in electronic devices - Improving the efficiency of quantum computing systems
Benefits: - Increased speed and efficiency in electronic devices - Lower power consumption leading to energy savings - Advancements in quantum computing technology
Commercial Applications: Title: "Innovative Tunneling Enabled FETs for High-Speed Electronic Devices" This technology can be applied in the development of high-performance electronic devices such as smartphones, computers, and quantum computing systems. The market implications include improved device speed, reduced power consumption, and potential advancements in quantum computing technology.
Questions about Tunneling Enabled Feedback FETs: 1. How do tunneling effects improve the performance of feedback FETs? 2. What are the specific requirements for the semiconductor material used in the source, channel, and drain regions of the feedback FETs?
Original Abstract Submitted
Example embodiments relate to tunneling enabled feedback field effect transistors (FETs). One example system includes a feedback field effect transistor. The feedback field effect transistor includes a source region. The feedback field effect transistor also includes a channel region. Additionally, the feedback field effect transistor includes a drain region. Further, the feedback field effect transistor includes a gate. The channel region is between the source region and the drain region. The source region, the channel region, and the drain region include a semiconductor material with a bandgap that is smaller than 0.9 eV. The source region or the drain region has a dopant concentration that is smaller than 5×10cm. The gate is positioned along the channel and isolated from the channel.
