18545636. MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
Organization Name
Inventor(s)
Thomas M. Graettinger of Boise ID (US)
Lorenzo Fratin of Buccinasco (IT)
Patrick M. Flynn of Boise ID (US)
Paolo Fantini of Vimercate (IT)
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18545636 titled 'MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
The patent application describes methods, systems, and devices for a memory device with laterally formed memory cells. A material stack is formed with a conductive layer between multiple dielectric layers, creating a channel in a sidewall of the material stack.
- The channel is filled with one or more materials, with the first side of the outermost material exposed.
- An opening is formed in the material stack to expose the second side of at least one material.
- The opening is used to replace a portion of the material with a chalcogenide material, after forming electrode materials.
Potential Applications: - Memory devices - Semiconductor manufacturing - Data storage technology
Problems Solved: - Enhancing memory cell performance - Improving data storage efficiency - Increasing memory device reliability
Benefits: - Higher memory density - Faster data access speeds - Enhanced overall device performance
Commercial Applications: Memory device manufacturers can utilize this technology to create more advanced and efficient memory products, catering to the growing demand for high-performance data storage solutions in various industries.
Prior Art: Readers can explore prior patents related to memory cell structures, semiconductor manufacturing, and data storage technologies to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Stay informed about the latest advancements in memory device technology, semiconductor materials, and data storage innovations to keep up with the rapidly evolving industry trends.
Questions about Memory Device with Laterally Formed Memory Cells:
1. How does the lateral formation of memory cells improve device performance? 2. What are the key advantages of using chalcogenide materials in memory devices?
Original Abstract Submitted
Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.
