18545488. PIXEL OF IMAGE SENSOR AND IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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PIXEL OF IMAGE SENSOR AND IMAGE SENSOR
Organization Name
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PIXEL OF IMAGE SENSOR AND IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18545488 titled 'PIXEL OF IMAGE SENSOR AND IMAGE SENSOR
The abstract describes a pixel of an image sensor and a backside illuminated image sensor, with specific features and structures outlined.
- Semiconductor substrate with a photoelectric conversion region and a floating diffusion region.
- First vertical transfer gate forming a transfer channel between the photoelectric conversion region and the floating diffusion region.
- The first vertical transfer gate may have a structure inclined with a first angle less than 90 degrees with respect to the first surface.
Potential Applications: - High-resolution digital cameras - Medical imaging devices - Security cameras
Problems Solved: - Improved image quality - Enhanced sensitivity to light - Reduction of noise in images
Benefits: - Higher quality images - Better performance in low light conditions - Increased efficiency in image processing
Commercial Applications: Title: Advanced Image Sensors for Enhanced Imaging Solutions This technology can be utilized in the development of high-end digital cameras, medical imaging equipment, and surveillance systems, catering to a wide range of industries.
Questions about the technology: 1. How does the inclined structure of the first vertical transfer gate improve image sensor performance? - The inclined structure allows for more efficient transfer of charge between the photoelectric conversion region and the floating diffusion region, enhancing overall sensor sensitivity.
2. What advantages does a backside illuminated image sensor offer over traditional front-illuminated sensors? - Backside illuminated sensors can capture more light due to the absence of circuitry blocking the light path, resulting in improved image quality and sensitivity.
Original Abstract Submitted
A pixel of an image sensor and a backside illuminated image sensor are provided. The pixel includes a semiconductor substrate including a first surface and a second surface, a photoelectric conversion region formed between the first surface and the second surface of the semiconductor substrate, a floating diffusion region formed on the first surface and spaced apart from the photoelectric conversion region in a vertical direction, and a first vertical transfer gate formed inside a recess extending from the first surface of the semiconductor substrate into the inside of the semiconductor substrate and forming a first transfer channel between the photoelectric conversion region and the floating diffusion region, wherein the first vertical transfer gate may have a structure inclined with a first angle less than 90 degrees with respect to the first surface.
