18544560. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Davin Lee of Suwon-si (KR)

Hyunseung Song of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18544560 titled 'INTEGRATED CIRCUIT DEVICE

The abstract describes an integrated circuit device with various features, including fin-type active regions, gate lines, source/drain regions, and source/drain contacts with metal plugs and conductive barrier layers.

  • The device has fin-type active regions in two device regions, each with gate lines crossing them.
  • Source/drain regions are located adjacent to the gate lines in the fin-type active regions.
  • Source/drain contacts are connected to the source/drain regions, with metal plugs and conductive barrier layers surrounding them.

Potential Applications: - This technology can be used in the semiconductor industry for advanced integrated circuit devices. - It can improve the performance and efficiency of electronic devices such as smartphones, computers, and other digital products.

Problems Solved: - Enhances the conductivity and reliability of source/drain contacts in integrated circuits. - Optimizes the design and layout of fin-type active regions for better functionality.

Benefits: - Increased speed and efficiency of electronic devices. - Enhanced durability and longevity of integrated circuits. - Improved overall performance of semiconductor devices.

Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.

Questions about the technology: 1. How does the use of fin-type active regions improve the functionality of the integrated circuit device? - Fin-type active regions enhance the control and efficiency of the device by providing a larger surface area for current flow and gate control.

2. What role do the source/drain contacts play in the overall performance of the integrated circuit device? - The source/drain contacts are crucial for connecting the active regions to the external circuitry, ensuring proper current flow and signal transmission within the device.


Original Abstract Submitted

An integrated circuit device includes: a substrate including a first and second device regions; a first and third fin-type active regions extending in a first direction in the first device region; a second and fourth fin-type active regions extending in the first direction in the second device region; a gate line extending in a second direction crossing the first direction in the first through fourth fin-type active regions; a first source/drain region adjacent to the gate line in the first fin-type active region; a second source/drain region adjacent to the gate line in the second fin-type active region; a first source/drain contact connected to the first source/drain region; and a second source/drain contact connected to the second source/drain region; wherein the first source/drain contact includes a first short metal plug and a first conductive barrier layer at least partially surrounding a portion of sidewalls of the first short metal plug.