18544315. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Samsung Display Co., LTD.)
Contents
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Organization Name
Inventor(s)
Myung-Soo Huh of Suwon-si (KR)
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18544315 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
The patent application describes a plasma processing apparatus with a chamber for substrate processing, a substrate stage with electrodes, a gas supply unit, and a thermal control unit to maintain electrode temperature.
- Simplified Explanation:
- Plasma processing apparatus for substrate treatment - Includes chamber, substrate stage, electrodes, gas supply, and thermal control - Electrodes maintained at the same temperature for efficient processing
- Key Features and Innovation:
- Dual electrode system for radio frequency signal application - Thermal control unit for temperature maintenance - Gas supply unit for process gas delivery - Efficient substrate processing within the chamber
- Potential Applications:
- Semiconductor manufacturing - Thin film deposition - Surface modification processes
- Problems Solved:
- Inefficient substrate processing due to temperature variations - Lack of control over process gas delivery - Limited uniformity in thin film deposition
- Benefits:
- Improved processing efficiency - Enhanced control over temperature and gas supply - Increased uniformity in substrate treatment
- Commercial Applications:
- "Plasma Processing Apparatus for Semiconductor Manufacturing and Thin Film Deposition" - Potential use in semiconductor fabrication facilities - Market implications in the electronics industry
- Questions about Plasma Processing Apparatus:
1. How does the thermal control unit contribute to the efficiency of substrate processing? - The thermal control unit ensures that the electrodes are maintained at the same temperature, leading to consistent and reliable processing results.
2. What are the advantages of using a dual electrode system in plasma processing? - The dual electrode system allows for the application of different radio frequency signals, enabling precise control over the plasma process.
Original Abstract Submitted
A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.
