18544237. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
Contents
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Organization Name
Inventor(s)
Taihei Matsuhashi of Kurokawa-gun (JP)
Wakako Ishida of Kurokawa-gun (JP)
ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18544237 titled 'ETCHING METHOD AND PLASMA PROCESSING APPARATUS
The disclosed etching method involves preparing a substrate with a multilayer film and a mask, followed by etching first and second films alternately stacked on the substrate.
- The method includes supplying pulses of source radio frequency power and electric bias intermittently during etching.
- This process allows for precise control over the etching of different layers in the multilayer film.
- By alternating between etching first and second films, intricate patterns and structures can be created on the substrate.
- The use of pulses helps optimize the etching process for efficiency and accuracy.
- Overall, this method offers a novel approach to etching multilayer films with improved precision and control.
Potential Applications: - Semiconductor manufacturing - Microelectronics fabrication - Photovoltaic cell production
Problems Solved: - Achieving precise etching of multilayer films - Controlling the etching process for complex structures - Enhancing efficiency and accuracy in etching techniques
Benefits: - Improved precision in creating intricate patterns - Enhanced control over the etching process - Increased efficiency in multilayer film etching
Commercial Applications: Title: Advanced Etching Method for Semiconductor Manufacturing This technology can be utilized in the production of various electronic devices, such as microchips, sensors, and displays. The precise control and efficiency offered by this method can significantly impact the semiconductor industry, leading to improved device performance and production processes.
Questions about the Advanced Etching Method: 1. How does the intermittent supply of source radio frequency power and electric bias enhance the etching process?
- The intermittent pulses help optimize the ion attraction and plasma generation, leading to more controlled and precise etching of the multilayer films.
2. What are the key advantages of etching first and second films alternately in the multilayer film?
- Alternating between etching different layers allows for the creation of complex patterns and structures with improved accuracy and efficiency.
Original Abstract Submitted
A disclosed etching method includes (a) preparing a substrate on a substrate support in a chamber. The substrate includes a multilayer film including a plurality of first films and a plurality of second films that are alternately stacked with the plurality of first films, and a mask disposed on the multilayer film. The etching method further includes (b) etching one or more first films among the plurality of first films. The etching method further includes (c) etching one or more second films among the plurality of second films. In each of the (b) and (c), a pulse of a source radio frequency power for plasma generation and a pulse of an electric bias for ion attraction are intermittently or periodically supplied.
