18543996. TREATMENTS TO ENHANCE MATERIAL STRUCTURES simplified abstract (Applied Materials, Inc.)
Contents
TREATMENTS TO ENHANCE MATERIAL STRUCTURES
Organization Name
Inventor(s)
Steven C. H. Hung of Sunnyvale CA (US)
Theresa Kramer Guarini of San Jose CA (US)
Johanes F. Swenberg of Los Gatos CA (US)
TREATMENTS TO ENHANCE MATERIAL STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18543996 titled 'TREATMENTS TO ENHANCE MATERIAL STRUCTURES
The abstract describes a method of forming a semiconductor structure involving pre-treatment, interfacial formation, and post-treatment processes.
- Pre-treatment process involves annealing the substrate surface in a hydrogen ambient.
- Interfacial formation process includes thermally oxidizing the pre-treated surface to form an interfacial layer.
- Post-treatment process involves annealing the surface of the interfacial layer in an ammonia ambient.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Solar cell production
Problems Solved: - Enhancing semiconductor structure quality - Improving device performance - Increasing efficiency in manufacturing processes
Benefits: - Enhanced semiconductor properties - Improved device reliability - Cost-effective manufacturing
Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers - Research institutions in the semiconductor field
Questions about the method: 1. How does the pre-treatment process impact the quality of the semiconductor structure? 2. What are the specific benefits of using an ammonia ambient in the post-treatment process?
Frequently Updated Research: - Ongoing studies on optimizing the pre-treatment process for different types of substrates - Research on the impact of interfacial layer thickness on semiconductor device performance.
Original Abstract Submitted
A method of forming a semiconductor structure includes performing a pre-treatment process, including annealing a surface of a substrate in a hydrogen (H) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post-treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH) ambient.
