18543849. AMPLIFIER CIRCUIT simplified abstract (SUMITOMO ELECTRIC INDUSTRIES, LTD.)
Contents
AMPLIFIER CIRCUIT
Organization Name
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor(s)
AMPLIFIER CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18543849 titled 'AMPLIFIER CIRCUIT
The abstract describes an amplifier circuit with two FETs, each having a field plate above a semiconductor layer between the gate and drain electrodes. The distances between the gate electrodes and field plates differ between the two FETs.
- The amplifier circuit includes two FETs with field plates above the semiconductor layer.
- The first FET has a shorter distance between the gate electrode and field plate compared to the second FET.
- This design allows for improved performance and efficiency in amplification processes.
- The unique configuration of the field plates enhances the overall functionality of the amplifier circuit.
- By optimizing the distances between the electrodes and field plates, the circuit can achieve better amplification results.
Potential Applications: - Audio amplification systems - Signal processing equipment - Communication devices
Problems Solved: - Enhanced amplification efficiency - Improved signal processing capabilities
Benefits: - Higher performance levels - Increased efficiency in amplification processes
Commercial Applications: Title: Advanced Amplifier Circuits for Enhanced Signal Processing This technology can be utilized in various industries such as telecommunications, audio equipment manufacturing, and electronic devices production. The improved efficiency and performance of the amplifier circuit can lead to better quality products and enhanced user experiences.
Questions about the technology: 1. How does the configuration of the field plates impact the performance of the amplifier circuit? 2. What are the specific advantages of having different distances between the gate electrodes and field plates in the FETs?
Original Abstract Submitted
An amplifier circuit includes a first FET including first source, first gate and first drain electrodes, and a first field plate having a part thereof provided above a semiconductive layer between the first gate and the first drain electrodes, and a second FET including second source, second gate and second drain electrodes, and a second field plate having a part thereof provided above the semiconductor layer between the second gate and the second drain electrodes, wherein a first distance between an end closer to the first drain electrode in a surface of the first gate electrode and an end closer to the first drain electrode in the first field plate is shorter than a second distance between an end closer to the second drain electrode in a surface of the second gate electrode and an end closer to the second drain electrode in the second field plate.
