18543279. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

MYEONG-DONG Lee of Suwon-si (KR)

SEUNG-BO Ko of Suwon-si (KR)

KEUNNAM Kim of Suwon-si (KR)

JONGMIN Kim of Suwon-si (KR)

HUI-JUNG Kim of Suwon-si (KR)

TAEJIN Park of Suwon-si (KR)

DONGHYUK Ahn of Suwon-si (KR)

KISEOK Lee of Suwon-si (KR)

MINYOUNG Lee of Suwon-si (KR)

INHO Cha of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18543279 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract includes active patterns that are spaced apart from each other in a specific direction. These active patterns have edge portions and center portions where bit line node contacts are located. Bit lines extend in a different direction and are connected to the bit line node contacts. The width of the bit line node contacts varies at different levels.

• Active patterns with edge and center portions
• Bit line node contacts on center portions
• Bit lines connected to bit line node contacts
• Variation in width of bit line node contacts at different levels
• Sequential arrangement of center portions in a specific direction

Potential Applications: - Memory storage devices - Computer systems - Mobile devices

Problems Solved: - Efficient data storage - Improved memory access speed

Benefits: - Higher data storage capacity - Faster data access - Enhanced overall performance of electronic devices

Commercial Applications: Title: "Innovative Semiconductor Memory Device for Enhanced Data Storage" This technology can be used in various electronic devices such as smartphones, laptops, and servers to improve data storage capacity and access speed. It can also be utilized in data centers for efficient data management.

Questions about Semiconductor Memory Device: 1. How does the variation in width of the bit line node contacts impact the performance of the memory device? The variation in width helps in optimizing the connection between the bit lines and the active patterns, leading to improved data access speed and overall efficiency of the memory device.

2. What are the key differences between this semiconductor memory device and traditional memory devices? This semiconductor memory device features a unique arrangement of active patterns and bit line node contacts, resulting in enhanced data storage capacity and faster access speeds compared to traditional memory devices.

Original Abstract Submitted

A semiconductor memory device include first and second active patterns extending in a first direction and spaced apart from each other in a second direction crossing the first direction. The first and second active patterns include a first and second edge portions spaced apart from each other in the first direction, and a center portion therebetween. Bit line node contacts are on the center portions. Bit lines are on the bit line node contacts and extend in a third direction crossing the first and second directions. The center portions of the first and second active patterns are sequentially disposed in the second direction. Each of the bit line node contacts has a first width at a level of a top surface, a second width at a level of a bottom surface, and a third width between the top and bottom surfaces less than the first and second widths.