18542627. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Changhwa Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18542627 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the patent application consists of a substrate, a first electrode, a multilayer dielectric structure, and a second electrode. The multilayer dielectric structure includes dielectric films with specific compositions, such as crystalline TiO or crystalline SrTiO, and a high-k dielectric film with a tetragonal crystal structure.
- The semiconductor device features a multilayer dielectric structure with specific dielectric film compositions, enhancing its performance.
- The inclusion of crystalline TiO or crystalline SrTiO in the dielectric films improves the device's properties.
- The high-k dielectric film with a tetragonal crystal structure in the second dielectric film further enhances the device's functionality.
- The device design aims to optimize performance and efficiency in semiconductor applications.
- The innovative dielectric structure contributes to the overall reliability and stability of the semiconductor device.
Potential Applications: This technology can be applied in various semiconductor devices, such as memory storage, integrated circuits, and sensors.
Problems Solved: The technology addresses the need for improved dielectric materials in semiconductor devices to enhance performance and reliability.
Benefits: The semiconductor device with this innovative dielectric structure offers enhanced performance, reliability, and efficiency in various applications.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced electronic devices and components.
Questions about the technology: 1. How does the specific composition of the dielectric films contribute to the performance of the semiconductor device? 2. What are the potential implications of using a high-k dielectric film with a tetragonal crystal structure in semiconductor applications?
Original Abstract Submitted
A semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. The multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline TiOor crystalline SrTiO, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.
