18541791. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18541791 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The semiconductor device described in the abstract consists of various layers and components arranged in a specific configuration to achieve a desired functionality.
- Source line: Extends horizontally on the substrate and serves as the starting point for the device's operation.
- Channel layer: Extends vertically from the substrate and includes a first end, a second end, and a sidewall connecting the two ends.
- Trap layer: Positioned on the sidewall of the channel layer to enhance the device's performance.
- Gate insulating layer: Located on the trap layer's outer surface to control the flow of current in the device.
- Word line: Positioned on the gate insulating layer's sidewall, extending horizontally in a direction perpendicular to the source line.
- Drain area: Located at the second end of the channel layer, made of metal or metal nitride.
- Bit line: Positioned on the drain area, extending horizontally in the same direction as the source line.
Potential Applications: - This semiconductor device can be used in various electronic applications such as memory storage, logic circuits, and microprocessors. - It can also be utilized in communication devices, sensors, and other semiconductor-based technologies.
Problems Solved: - The device addresses the need for efficient and reliable semiconductor components with improved performance characteristics. - It solves the challenge of controlling current flow and enhancing the overall functionality of electronic devices.
Benefits: - Enhanced performance and efficiency in electronic devices. - Improved reliability and durability of semiconductor components. - Increased functionality and versatility in various applications.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Performance This technology can be commercialized in the semiconductor industry for the development of high-performance electronic devices, memory storage solutions, and advanced communication systems. The market implications include improved product offerings, increased competitiveness, and potential growth opportunities in the electronics sector.
Questions about the Advanced Semiconductor Device: 1. How does the trap layer contribute to the overall performance of the semiconductor device? The trap layer enhances the device's performance by improving charge carrier mobility and reducing leakage currents, leading to increased efficiency and reliability.
2. What role does the gate insulating layer play in controlling the flow of current in the semiconductor device? The gate insulating layer acts as a barrier that regulates the movement of charge carriers within the device, ensuring precise control over the flow of current and enhancing overall functionality.
Original Abstract Submitted
A semiconductor device includes a source line extending in a first horizontal direction on a substrate, a channel layer extending in a vertical direction perpendicular to an upper surface of the substrate, and including a first end, a second end opposite to the first end, and a channel layer sidewall connecting the first end with the second end, the first end being disposed on the source line, a trap layer disposed on the channel layer sidewall, a gate insulating layer disposed on an outer surface of the trap layer, a word line disposed on at least one sidewall of the gate insulating layer and extending in a second horizontal direction crossing the first horizontal direction, a drain area disposed on the second end of the channel layer and including a metal or metal nitride, and a bit line disposed on the drain area and extending in the first horizontal direction.
