18541091. METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Eunhyoung Cho of Suwon-si (KR)
METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18541091 titled 'METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME
The method described in the patent application involves selectively forming a layer using atomic layer deposition on a substrate with different regions and surfaces.
- The first region of the substrate consists of a first material, while the second region consists of a second material.
- A first reaction inhibition layer is formed on the second surface using a reaction inhibitor selectively adsorbed on the surface.
- A first deposition layer is selectively formed on the first surface using a first precursor and reactant that react to form an atomic layer.
- The reaction inhibitor prevents the formation of the atomic layer on the second surface.
- The first reaction inhibition layer on the second surface is converted into a second deposition layer using a second reactant that reacts with the inhibition layer to form the atomic layer.
Potential Applications: - Semiconductor manufacturing - Thin film coatings - Surface modification in electronics
Problems Solved: - Controlling the deposition of layers on different regions of a substrate - Achieving precise atomic layer deposition
Benefits: - Enhanced control over layer formation - Improved surface properties - Increased efficiency in manufacturing processes
Commercial Applications: Title: Advanced Atomic Layer Deposition Technology for Semiconductor Manufacturing This technology could be used in the production of advanced semiconductor devices, leading to improved performance and reliability in electronic products. The market implications include increased demand for equipment and materials used in semiconductor manufacturing.
Prior Art: Prior art related to this technology may include research on atomic layer deposition techniques, surface modification methods, and semiconductor manufacturing processes.
Frequently Updated Research: Researchers are continuously exploring new materials and techniques for atomic layer deposition to enhance the efficiency and precision of thin film coatings in various industries.
Questions about Atomic Layer Deposition: 1. How does atomic layer deposition differ from other thin film deposition techniques?
- Atomic layer deposition is a self-limiting process that allows for precise control over layer thickness and composition, unlike other deposition methods that may be less controlled.
2. What are the key factors influencing the growth of atomic layers in atomic layer deposition?
- The choice of precursors, reactants, and reaction conditions play a crucial role in determining the growth rate and properties of atomic layers in atomic layer deposition.
Original Abstract Submitted
A method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
