18538369. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Seongyul Park of Suwon-si (KR)
Myoungho Kang of Suwon-si (KR)
Changhyeon Lee of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18538369 titled 'INTEGRATED CIRCUIT DEVICES
The patent application describes an integrated circuit device with fin-type active regions protruding from a substrate, gate pillars, and gate groups arranged on the active regions.
- The device features gate patterns in the gate groups, spaced apart and extending in a horizontal direction.
- Each gate group includes at least one dummy gate pattern at one end, in contact with the gate pillar.
- The dummy gate pattern is connected to the gate pillar, enhancing the functionality of the device.
Potential Applications: - This technology can be used in the semiconductor industry for advanced integrated circuit designs. - It may find applications in high-performance computing systems and mobile devices.
Problems Solved: - Enhances the performance and efficiency of integrated circuits. - Allows for more precise control and manipulation of electronic signals.
Benefits: - Improved functionality and reliability of integrated circuits. - Enhanced performance in various electronic devices.
Commercial Applications: - This technology could be valuable for semiconductor manufacturers looking to develop cutting-edge products for the market.
Questions about the Technology: 1. How does the integration of dummy gate patterns improve the functionality of the integrated circuit device? 2. What are the specific advantages of using fin-type active regions in this technology?
Frequently Updated Research: - Stay updated on the latest advancements in integrated circuit design and semiconductor technology to understand the evolving landscape of this field.
Original Abstract Submitted
An integrated circuit device may include fin-type active regions protruding from a surface of a substrate and extending in a first horizontal direction, at least one gate pillar on the substrate and extending in the first horizontal direction, and a plurality of gate groups arranged in a second horizontal direction on the plurality of fin-type active regions. Each of the plurality of gate groups may include a plurality of gate patterns spaced apart from each other in the second horizontal direction. Each of the plurality of gate patterns may extend in the second horizontal direction. The plurality of gate patterns each may include at least one dummy gate pattern on at least one end of a corresponding one of the plurality of gate groups in the second horizontal direction. The at least one dummy gate pattern may be in contact with and connected to the at least one gate pillar.
