18538009. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Shunpei Yamazaki of Setagaya, Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18538009 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the patent application functions as a memory device, containing multiple memory cells with first and second transistors in each cell.

• The first transistor is located over a substrate with a semiconductor material and has a channel formation region within the substrate.
• The second transistor features an oxide semiconductor layer.
• The gate electrode of the first transistor and one of the source or drain electrodes of the second transistor are electrically connected.
• The second transistor has an extremely low off current, allowing data stored in the memory cell to be retained for a long time without power.

Potential Applications: - Memory devices in various electronic products - Data storage in IoT devices - Embedded memory in microcontrollers

Problems Solved: - Data retention in memory devices without power supply - Enhanced memory cell performance and reliability

Benefits: - Long-term data retention - Improved memory cell efficiency - Energy-efficient memory devices

Commercial Applications: Title: Semiconductor Memory Devices for Enhanced Data Retention This technology can be utilized in consumer electronics, IoT devices, and industrial applications for reliable data storage solutions.

Prior Art: Research prior semiconductor memory devices with enhanced data retention capabilities, focusing on similar transistor configurations and memory cell structures.

Frequently Updated Research: Stay updated on advancements in semiconductor memory technology, particularly in the field of data retention and low-power memory devices.

Questions about Semiconductor Memory Devices for Enhanced Data Retention: 1. How does the extremely low off current of the second transistor contribute to long-term data retention in the memory cell? 2. What are the potential challenges in implementing this technology in high-density memory devices?

Original Abstract Submitted

Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power.