18536026. APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME simplified abstract (Micron Technology, Inc.)
Contents
APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME
Organization Name
Inventor(s)
Maxtheodore Tateno of Higashihiroshima (JP)
Takashi Sasaki of Higashihiroshima (JP)
APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18536026 titled 'APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME
Simplified Explanation:
The patent application describes a semiconductor structure with a trench in a substrate, spacers at the bottom of the trench, and spin-on dielectric material in the trench.
Key Features and Innovation:
- Semiconductor structure with a trench in the substrate
- Spacers located at the bottom surface of the trench
- Spin-on dielectric material filling the trench
Potential Applications: This technology could be used in the semiconductor industry for advanced integrated circuits and microelectronics.
Problems Solved: This innovation addresses the need for improved semiconductor structures with enhanced performance and functionality.
Benefits:
- Increased efficiency in semiconductor manufacturing
- Enhanced performance of integrated circuits
- Improved reliability of microelectronics
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices and components for various industries.
Questions about Semiconductor Structures: 1. How does the presence of spacers at the bottom of the trench impact the overall performance of the semiconductor structure? 2. What are the specific advantages of using spin-on dielectric material in the trench of the semiconductor structure?
Original Abstract Submitted
A semiconductor structure includes a trench in a substrate, one or more spacers at a bottom surface of the trench, and spin-on dielectric in the trench.
