18535095. VERTICAL NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VERTICAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18535095 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE
The abstract describes a vertical non-volatile memory device with a unique structure.
- Memory cell region with overlapping gate lines and insulating layer
- Extension region with stepped connection portions and raised pads
- Peripheral circuit structure with wiring layer and through type cell contact pattern
- Through type cell contact monitoring pattern in the extension region
Potential Applications: - Data storage devices - Embedded systems - Consumer electronics
Problems Solved: - Efficient memory cell organization - Improved data access speed - Enhanced device reliability
Benefits: - Higher memory density - Faster data transfer rates - Increased device lifespan
Commercial Applications: Title: Vertical Non-Volatile Memory Device for High-Performance Data Storage This technology can be utilized in solid-state drives, smart devices, and industrial automation systems, enhancing data storage capabilities and overall device performance.
Prior Art: Researchers can explore patents related to vertical memory structures, non-volatile memory devices, and semiconductor manufacturing processes to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring ways to enhance the efficiency and scalability of vertical non-volatile memory devices, focusing on improving data retention capabilities and reducing power consumption.
Questions about Vertical Non-Volatile Memory Devices: 1. How does the unique structure of this memory device contribute to its performance compared to traditional memory devices? 2. What are the key challenges in manufacturing vertical non-volatile memory devices, and how are researchers addressing them?
Original Abstract Submitted
A vertical non-volatile memory device, including a memory cell region including a plurality of gate lines overlapping each other in a vertical direction, and an insulating layer insulating the plurality of gate lines from each other in the vertical direction, an extension region on one side of the memory cell region, the extension region including a plurality of stepped connection portions having a plurality of raised pads integrally connected to each of the plurality of gate lines, a peripheral circuit structure in a lower portion of the memory cell region and the extension region, the peripheral circuit structure including a peripheral circuit wiring layer, a through type cell contact pattern in the extension region penetrating the plurality of gate lines, the insulating layer, and the plurality of stepped connection portions, and a through type cell contact monitoring pattern in the extension region spaced from the through type cell contact pattern.
