18534400. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Myeong-Dong Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18534400 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of active patterns, word lines, bit lines, and storage nodes that are arranged in a specific configuration to optimize memory storage and retrieval.
- The device includes first and second active patterns that are extended in one direction and placed side by side in another direction.
- Each active pattern has edge portions that are spaced apart from each other in the first direction.
- Word lines intersect each active pattern, while bit lines run along each active pattern in a third direction.
- Storage node contacts are located on the edge portion of the first active pattern, with varying widths at different levels.
- The first level has a larger width than the second level when measured in the second direction.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers to enhance memory storage capabilities. - It can also be applied in data centers and servers to improve data processing speeds and efficiency.
Problems Solved: - The semiconductor memory device addresses the need for increased memory capacity and faster data access in electronic devices. - It solves the challenge of optimizing memory storage within limited physical space constraints.
Benefits: - Improved memory performance and efficiency in electronic devices. - Enhanced data processing speeds and overall device functionality. - Increased storage capacity without significantly increasing the device's size.
Commercial Applications: Title: "Enhanced Semiconductor Memory Device for Improved Data Storage" This technology can be commercially utilized in the production of consumer electronics, data storage devices, and server systems to enhance memory capabilities and improve overall performance.
Questions about the technology: 1. How does the varying width of the storage node contacts contribute to the efficiency of the memory device? 2. What are the potential implications of implementing this semiconductor memory technology in data centers and server systems?
Original Abstract Submitted
An example semiconductor memory device includes first and second active patterns, which are extended in a first direction and are disposed side by side in a second direction. Each of the first and second active patterns includes first and second edge portions, which are spaced apart from each other in the first direction. A pair of word lines are disposed to cross each of the first and second active patterns, a pair of bit lines are disposed on each of the first and second active patterns and are extended in a third direction, and a storage node contacts on the first edge portion of the first active pattern. When measured in the second direction, a first width of the storage node contact at a first level is larger than a second width at a second level. The first level is lower than the second level.
