18534333. POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE simplified abstract (Applied Materials, Inc.)

POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE

Organization Name

Applied Materials, Inc.

Inventor(s)

Mohammad Mahdi Tavakoli of Santa Clara CA (US)

Avgerinos V. Gelatos of Scotts Valley CA (US)

Jiajie Cen of Santa Clara CA (US)

Kevin Kashefi of Dublin CA (US)

Joung Joo Lee of San Jose CA (US)

Zhihui Liu of Santa Clara CA (US)

Yang Zhou of Santa Clara CA (US)

Zhiyuan Wu of San Jose CA (US)

Meng-Shan Wu of Santa Clara CA (US)

POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18534333 titled 'POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE

The semiconductor structure described in the patent application consists of multiple layers, including a metal layer, interconnect, barrier layer, and metal capping layer with specific properties and thickness.

• The first level of the structure contains a metal layer within a dielectric layer on a substrate.
• The second level, built on the first level, includes an interconnect within another dielectric layer and a barrier layer surrounding the interconnect.
• A metal capping layer, made of tungsten and ranging from 20 Å to 40 Å in thickness, is positioned at the interface between the metal layer and the interconnect.

Potential Applications: - This semiconductor structure can be used in the manufacturing of advanced electronic devices such as integrated circuits and microprocessors. - It can enhance the performance and reliability of semiconductor components in various electronic applications.

Problems Solved: - The structure helps in reducing resistance and improving signal transmission within semiconductor devices. - It provides better protection against external factors that could affect the functionality of electronic components.

Benefits: - Improved conductivity and signal integrity in semiconductor devices. - Enhanced durability and longevity of electronic components. - Increased efficiency and performance of electronic devices.

Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Electronic Devices This technology can be utilized in the production of high-performance electronic devices, leading to improved functionality and reliability. It can cater to industries such as telecommunications, computing, and consumer electronics, driving innovation and competitiveness in the market.

Questions about Semiconductor Structure: 1. How does the metal capping layer contribute to the overall performance of the semiconductor structure? 2. What are the specific advantages of using tungsten in the metal capping layer for semiconductor applications?

Original Abstract Submitted

A semiconductor structure includes a first level comprising a metal layer within a first dielectric layer formed on a substrate, a second level formed on the first level, the second level comprising an interconnect within a second dielectric layer and a barrier layer formed around the interconnect, and a metal capping layer disposed at an interface between the metal layer and the interconnect, wherein the metal capping layer comprises tungsten (W) and has a thickness of between 20 Å and 40 Å.