18533262. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18533262 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
The patent application describes a method of manufacturing an integrated circuit device involving the formation of various layers and structures on a substrate to create a complex wiring system.
- Formation of a preliminary channel stack with sacrificial layers and channel layers on the substrate.
- Creation of a buried trench by removing a portion of the preliminary channel stack and substrate.
- Formation of a sacrificial buried layer in the buried trench.
- Development of a source/drain region on a fin-type active region.
- Integration of a power via on the sacrificial buried layer, electrically connected to the source/drain region.
- Removal of the sacrificial buried layer to expose the bottom surface.
- Formation of a backside buried wiring layer in the buried trench, connected to the power via.
- Creation of a backside wiring structure connected to the backside buried wiring layer.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Complex wiring structures in integrated circuits - Efficient power distribution - Enhanced connectivity in electronic devices
Benefits: - Improved performance of integrated circuits - Higher efficiency in power distribution - Enhanced reliability of electronic devices
Commercial Applications: Title: "Advanced Integrated Circuit Manufacturing for Enhanced Performance" This technology can be applied in the production of high-performance electronic devices, such as smartphones, computers, and IoT devices, to improve their functionality and reliability.
Prior Art: Readers can explore prior research in semiconductor manufacturing, integrated circuit design, and electronic device production to understand the evolution of similar technologies.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to enhance the performance and efficiency of integrated circuits, offering potential advancements in this field.
Questions about Integrated Circuit Manufacturing: 1. How does this method improve the efficiency of power distribution in integrated circuits? 2. What are the key advantages of using a fin-type active region in semiconductor devices?
Original Abstract Submitted
A method of manufacturing an integrated circuit device includes forming a preliminary channel stack, which includes sacrificial layers and channel layers, on a substrate, forming a preliminary channel pattern and a fin-type active region by removing a portion of the preliminary channel stack and a portion of the substrate to define a buried trench, forming a sacrificial buried layer in the buried trench, forming a source/drain region on the fin-type active region, forming, on the sacrificial buried layer, a power via electrically connected to the source/drain region, removing a portion of the substrate to expose a bottom surface of the sacrificial buried layer, removing the sacrificial buried layer and forming, in the buried trench, a backside buried wiring layer connected to the power via, and forming a backside wiring structure electrically connected to the backside buried wiring layer.
