18532975. SCALABLE MPS DEVICE BASED ON SIC simplified abstract (STMICROELECTRONICS S.r.l.)

SCALABLE MPS DEVICE BASED ON SIC

Organization Name

STMICROELECTRONICS S.r.l.

Inventor(s)

Simone Rascuna' of Catania (IT)

Mario Giuseppe Saggio of Aci Bonaccorsi (IT)

SCALABLE MPS DEVICE BASED ON SIC - A simplified explanation of the abstract

This abstract first appeared for US patent application 18532975 titled 'SCALABLE MPS DEVICE BASED ON SIC

Simplified Explanation

The patent application describes a Merged-PiN-Schottky (MPS) device on a SiC substrate, with alternating junction-barrier (JB) diodes and Schottky diodes along an axis. The breakdown voltage of the MPS device is at least 115% of the maximum working voltage in an inhibition state.

• SiC substrate with first conductivity
• Drift layer of SiC with first conductivity on the substrate
• Implanted region with second conductivity at the top surface of the drift layer to form a JB diode with the substrate
• First electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer
• Alternating JB diodes and Schottky diodes along an axis, with the Schottky diode having a smaller or equal width compared to the JB diode

Potential Applications

This technology could be applied in high-power electronic devices, such as power converters, inverters, and motor drives.

Problems Solved

This innovation helps in improving the breakdown voltage and efficiency of power electronic devices, reducing energy losses and enhancing overall performance.

Benefits

- Higher breakdown voltage - Improved efficiency - Reduced energy losses - Enhanced performance of power electronic devices

Potential Commercial Applications

"Enhancing Power Electronic Devices Efficiency with Merged-PiN-Schottky (MPS) Technology"

Possible Prior Art

Prior art may include patents or publications related to SiC-based power devices, Schottky diodes, and junction-barrier diodes.

How does this technology compare to traditional SiC power devices in terms of efficiency and performance?

This article does not provide a direct comparison between this technology and traditional SiC power devices. Further research or testing may be needed to determine the specific advantages of the MPS device over existing technologies.

What are the potential challenges in scaling up the production of MPS devices for commercial use?

The article does not address the scalability of production for MPS devices. Factors such as cost, manufacturing processes, and market demand could impact the commercial viability of this technology. Additional studies or analyses may be required to assess the feasibility of large-scale production.

Original Abstract Submitted

Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.