18532186. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

HOYOUNG Tang of Suwon-si (KR)

TAE-HYUNG Kim of Suwon-si (KR)

JUNGHO Do of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18532186 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes first and second transistors, an isolation transistor, a lower power line, and a back-side gate contact connected to the lower power line and a dummy gate electrode.

  • The semiconductor device has multiple transistors on a substrate.
  • An isolation transistor separates the first and second transistors.
  • A lower power line is located in the lower portion of the substrate.
  • A back-side gate contact penetrates the substrate and connects to the lower power line and a dummy gate electrode of the isolation transistor.

Key Features and Innovation

  • Integration of first and second transistors with an isolation transistor for improved performance.
  • Placement of a lower power line in the substrate to enhance power distribution.
  • Use of a back-side gate contact to connect the lower power line and a dummy gate electrode.

Potential Applications

The technology can be applied in various semiconductor devices requiring efficient power distribution and isolation between transistors.

Problems Solved

The semiconductor device addresses issues related to power management, transistor isolation, and overall performance enhancement in electronic devices.

Benefits

  • Improved power distribution efficiency.
  • Enhanced transistor isolation for better performance.
  • Overall optimization of semiconductor device functionality.

Commercial Applications

The technology can be utilized in the development of advanced electronic devices such as smartphones, tablets, and computers, improving their overall performance and power efficiency.

Questions about Semiconductor Device

1. How does the back-side gate contact enhance the functionality of the semiconductor device?

The back-side gate contact improves connectivity between the lower power line and the dummy gate electrode, enhancing overall performance and power distribution.

2. What are the potential implications of using an isolation transistor in the semiconductor device?

The isolation transistor helps in separating different transistors, reducing interference and improving the efficiency of the device.


Original Abstract Submitted

A semiconductor device including: first and second transistors on a substrate; an isolation transistor provided between the first and second transistors; a lower power line in a lower portion of the substrate; and a back-side gate contact penetrating the substrate and connected to the lower power line and a dummy gate electrode of the isolation transistor.