18531929. SILICON CARBIDE WAFER MANUFACTURING APPARATUS simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
SILICON CARBIDE WAFER MANUFACTURING APPARATUS
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Hiroaki Fujibayashi of Nisshin-shi (JP)
SILICON CARBIDE WAFER MANUFACTURING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18531929 titled 'SILICON CARBIDE WAFER MANUFACTURING APPARATUS
The abstract describes a silicon carbide wafer manufacturing apparatus with a cooling unit capable of cooling a separation space to 400°C or lower. The supply pipe includes a dopant gas supply pipe for an ammonia-based gas, a growth gas supply pipe for a growth gas containing a silane-based gas and a chlorine-based gas, and an inert gas supply pipe for an inert gas.
- Cooling unit capable of cooling a separation space to 400°C or lower
- Supply pipe includes dopant gas supply pipe, growth gas supply pipe, and inert gas supply pipe
- Dopant gas supply pipe for an ammonia-based gas
- Growth gas supply pipe for a growth gas containing a silane-based gas and a chlorine-based gas
- Inert gas supply pipe for an inert gas included in the reactant gas
Potential Applications: - Semiconductor manufacturing - Electronics industry - Solar panel production
Problems Solved: - Efficient cooling of separation space - Precise supply of dopant and growth gases
Benefits: - Improved quality of silicon carbide wafers - Enhanced control over the manufacturing process - Increased productivity and yield
Commercial Applications: Title: Advanced Silicon Carbide Wafer Manufacturing Apparatus This technology can be used in semiconductor fabrication facilities, electronics manufacturing plants, and solar panel production facilities. It offers a more efficient and precise method for producing high-quality silicon carbide wafers, leading to improved performance in electronic devices and solar panels.
Questions about Silicon Carbide Wafer Manufacturing Apparatus: 1. How does the cooling unit in the apparatus contribute to the manufacturing process? The cooling unit ensures that the separation space is maintained at the optimal temperature for the production of silicon carbide wafers, enhancing the quality and yield of the final product.
2. What are the key gases supplied through the different pipes in the apparatus? The dopant gas supply pipe delivers an ammonia-based gas, the growth gas supply pipe provides a growth gas containing silane-based and chlorine-based gases, and the inert gas supply pipe supplies an inert gas to the separation space.
Original Abstract Submitted
In a silicon carbide wafer manufacturing apparatus, a cooling unit is capable of cooling a separation space to 400° C. or lower, and a supply pipe includes a dopant gas supply pipe through which an ammonia-based gas included in a reactant gas is to be supplied, a growth gas supply pipe through which a growth gas containing a silane-based gas and a chlorine-based gas and included in the reactant gas is to be supplied, and an inert gas supply pipe through which an inert gas included in the reactant gas is to be supplied between a portion of the separation space to which the ammonia-based gas is to be supplied and a portion of the separation space to which the chlorine-based gas is to be supplied.
