18531929. SILICON CARBIDE WAFER MANUFACTURING APPARATUS simplified abstract (DENSO CORPORATION)
Contents
SILICON CARBIDE WAFER MANUFACTURING APPARATUS
Organization Name
Inventor(s)
Hiroaki Fujibayashi of Nisshin-shi (JP)
SILICON CARBIDE WAFER MANUFACTURING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18531929 titled 'SILICON CARBIDE WAFER MANUFACTURING APPARATUS
The abstract describes a patent application for a silicon carbide wafer manufacturing apparatus with a cooling unit capable of cooling a separation space to 400°C or lower. The supply pipe includes a dopant gas supply pipe for an ammonia-based gas, a growth gas supply pipe for a silane-based gas and a chlorine-based gas, and an inert gas supply pipe for an inert gas.
- Cooling unit capable of cooling a separation space to 400°C or lower
- Supply pipe includes dopant gas supply pipe for ammonia-based gas, growth gas supply pipe for silane-based gas and chlorine-based gas, and inert gas supply pipe for inert gas
- Inert gas supplied between portions of separation space for different gases
- Innovation in silicon carbide wafer manufacturing process
- Enhanced control over gas supply for improved wafer quality
Potential Applications: - Semiconductor industry for manufacturing silicon carbide wafers - Electronics industry for high-performance electronic components
Problems Solved: - Precise control over gas supply for doping and growth processes - Ensuring uniform and high-quality silicon carbide wafers
Benefits: - Improved efficiency in wafer manufacturing - Enhanced quality and performance of electronic components
Commercial Applications: Title: Advanced Silicon Carbide Wafer Manufacturing Technology Commercial uses: Semiconductor manufacturing, electronics industry Market implications: Increased production efficiency, higher quality electronic components
Questions about the technology: 1. How does the cooling unit in the apparatus contribute to the manufacturing process? 2. What are the specific advantages of using an ammonia-based gas in the supply pipe for silicon carbide wafer production?
Original Abstract Submitted
In a silicon carbide wafer manufacturing apparatus, a cooling unit is capable of cooling a separation space to 400° C. or lower, and a supply pipe includes a dopant gas supply pipe through which an ammonia-based gas included in a reactant gas is to be supplied, a growth gas supply pipe through which a growth gas containing a silane-based gas and a chlorine-based gas and included in the reactant gas is to be supplied, and an inert gas supply pipe through which an inert gas included in the reactant gas is to be supplied between a portion of the separation space to which the ammonia-based gas is to be supplied and a portion of the separation space to which the chlorine-based gas is to be supplied.
