18531898. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device Innovation
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Suk Shin of Suwon-si (KR)
Jung Taek Kim of Suwon-si (KR)
Seok Hoon Kim of Suwon-si (KR)
Seo Jin Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18531898 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application features gate structures with unique semiconductor layers to enhance performance and reliability.
- The device includes an active pattern and gate structures made of silicon-germanium.
- Each gate structure consists of a gate electrode, gate spacer, and source/drain pattern.
- The semiconductor filling layer protrudes beyond the active pattern, improving efficiency.
- The inner surface of the semiconductor liner layer has a concave region in a plan view.
Key Features and Innovation
- Utilization of silicon-germanium semiconductor layers in gate structures.
- Semiconductor filling layer protrudes for enhanced performance.
- Concave region in the inner surface of the semiconductor liner layer.
Potential Applications
The technology can be applied in various semiconductor devices requiring improved performance and reliability, such as advanced integrated circuits and microprocessors.
Problems Solved
- Enhances the performance and reliability of semiconductor elements.
- Improves efficiency and functionality of the device.
Benefits
- Increased performance and reliability.
- Enhanced efficiency and functionality.
- Potential for advanced semiconductor applications.
Commercial Applications
- Title: "Enhanced Semiconductor Devices for Improved Performance"
- The technology can be utilized in the production of high-performance electronics, leading to better consumer electronics, faster computing devices, and more efficient power management systems.
Prior Art
Readers interested in prior art related to this technology can explore patents and research papers on silicon-germanium semiconductor materials, advanced gate structures in semiconductor devices, and innovations in improving semiconductor performance and reliability.
Frequently Updated Research
Stay updated on the latest advancements in silicon-germanium semiconductor technology, gate structure design in semiconductor devices, and innovations in enhancing semiconductor performance and reliability.
Questions about Semiconductor Device Innovation
What are the key benefits of using silicon-germanium semiconductor layers in gate structures?
Using silicon-germanium semiconductor layers in gate structures can improve device performance, reliability, and efficiency due to their unique properties and compatibility with existing semiconductor technologies.
How does the protruding semiconductor filling layer contribute to the device's functionality?
The protruding semiconductor filling layer extends beyond the active pattern, increasing the surface area for electrical connections and enhancing the device's overall performance and efficiency.
Original Abstract Submitted
There is provided a semiconductor device capable of improving performance and reliability of an element. The semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. Each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. The gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. The semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern. A maximum width of the upper portion of the semiconductor filling layer in the first direction is greater than a width of the semiconductor filling layer in the first direction on the upper surface of the active pattern. The semiconductor liner layer comprises an outer surface in contact with the active pattern and an inner surface facing the semiconductor filling layer. In a plan view, the inner surface of the semiconductor liner layer comprises a concave region.
