18531235. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hongsik Shin of Suwon-si (KR)

Kyongbeom Koh of Suwon-si (KR)

Eunkyung Ko of Suwon-si (KR)

Hyonwook Ra of Suwon-si (KR)

Dongsoo Seo of Suwon-si (KR)

Jeongyeon Seo of Suwon-si (KR)

Kwangyong Yang of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18531235 titled 'SEMICONDUCTOR DEVICES

The semiconductor device described in the patent application includes various components such as an active region, gate structure, source/drain region, contact structure, device isolation layer, interlayer insulating layer, vertical power structure, rear power structure, vertical insulating film, and rear insulating film.

• The active region extends in one direction, while the gate structure extends in another direction on the active region.
• The source/drain region is located on the active region and positioned on at least one side of the gate structure.
• A contact structure is placed on the source/drain region for electrical connections.
• The device isolation layer surrounds the active region to prevent interference.
• An interlayer insulating layer covers the gate structure, source/drain region, and device isolation layer.
• The vertical power structure penetrates through the device isolation and interlayer insulating layers, connected to the contact structure.
• A rear power structure is electrically connected to the vertical power structure, surrounding the lower and side surfaces of the vertical power structure.
• A vertical insulating film separates the vertical power structure from the rear power structure.
• A rear insulating film covers the side of the rear power structure.

Potential Applications: - Power electronics - Semiconductor devices - Integrated circuits

Problems Solved: - Improved power efficiency - Enhanced device performance - Better heat dissipation

Benefits: - Higher power density - Increased reliability - Enhanced thermal management

Commercial Applications: Title: Advanced Power Semiconductor Devices for Efficient Energy Conversion This technology can be utilized in industries such as renewable energy, electric vehicles, and consumer electronics for more efficient power conversion and management.

Questions about the technology: 1. How does the vertical power structure improve the performance of the semiconductor device? 2. What are the advantages of the rear power structure in terms of electrical connectivity and thermal management?

Original Abstract Submitted

A semiconductor device may include an active region extending in a first direction; a gate structure extending in a second direction on the active region; a source/drain region on the active region and disposed at least one side of the gate structure; a contact structure on the source/drain region; a device isolation layer surrounding the active region; an interlayer insulating layer on the device isolation layer, the gate structure, and the source/drain region; a vertical power structure penetrating through the device isolation and interlayer insulating layers and connected to the contact structure; a rear power structure electrically connected to the vertical power structure and surrounding an entirety of a lower surface and a portion of a side surface of the vertical power structure; a vertical insulating film between the vertical power structure and the rear power structure; and a rear insulating film covering a side of the rear power structure.