18531078. ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Hyangsook Lee of Suwon-si (KR)
ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18531078 titled 'ELECTRONIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
The patent application describes an electronic device and apparatus with a unique structure involving a conductive material layer, a mixed material layer, and an electrode layer.
- The mixed material layer contains both an orthorhombic crystal phase and a tetragonal crystal phase, allowing for the coexistence of a ferroelectric material and an anti-ferroelectric material.
- This innovative design enables the device to exhibit properties of both ferroelectric and anti-ferroelectric materials simultaneously, leading to enhanced performance and functionality.
Potential Applications:
- This technology could be used in electronic devices requiring high performance and stability, such as sensors, actuators, and memory devices.
Problems Solved:
- By combining ferroelectric and anti-ferroelectric materials in one layer, this technology addresses the limitations of traditional materials and opens up new possibilities for device design and functionality.
Benefits:
- Improved performance, stability, and functionality in electronic devices.
- Enhanced capabilities for sensors, actuators, and memory devices.
Commercial Applications:
- This technology has potential applications in the consumer electronics industry, particularly in the development of advanced sensors and memory devices.
Prior Art:
- Researchers interested in this technology may want to explore prior studies on ferroelectric and anti-ferroelectric materials, as well as advancements in mixed material layers in electronic devices.
Frequently Updated Research:
- Stay informed on the latest developments in ferroelectric and anti-ferroelectric materials research to understand how this technology may evolve in the future.
Questions about the technology: 1. How does the coexistence of ferroelectric and anti-ferroelectric materials in the mixed material layer impact the overall performance of the electronic device? 2. What potential challenges may arise in manufacturing electronic devices with this unique material structure?
Original Abstract Submitted
Provided as an electronic device and an electronic apparatus including the electronic device. The electronic device includes a conductive material layer, a mixed material layer covering the conductive material layer, and an electrode layer covering the mixed material layer. The mixed material layer includes an orthorhombic crystal phase and a tetragonal crystal phase mixed therein such that a ferroelectric material and an anti-ferroelectric material coexist therein.
