18531071. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Seungpyo Hong of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18531071 titled 'INTEGRATED CIRCUIT DEVICE
The patent application describes an integrated circuit device with innovative features such as nanosheet stacks and gate cut insulating portions.
- Fin-type active regions extend on a substrate in a first lateral direction.
- Device isolation film covers the sidewalls of the fin-type active regions.
- Gate line is positioned on the fin-type active regions and the device isolation film.
- Nanosheet stacks are located on the fin top surface of each fin-type active region.
- Gate cut insulating portions face the end sidewalls of the gate line in a second lateral direction.
- Corner insulating spacers are placed between the nanosheet stacks and the gate cut insulating portions.
Potential Applications: - Advanced semiconductor devices - High-performance electronics - Next-generation integrated circuits
Problems Solved: - Enhancing device performance - Improving efficiency of integrated circuits - Reducing power consumption
Benefits: - Increased speed and functionality of electronic devices - Enhanced overall performance - Potential for smaller and more energy-efficient devices
Commercial Applications: Title: "Innovative Integrated Circuit Device for Enhanced Performance" This technology could revolutionize the semiconductor industry by enabling the development of faster, more efficient electronic devices. It has the potential to be used in a wide range of commercial applications, from consumer electronics to industrial equipment.
Questions about the technology: 1. How does the integration of nanosheet stacks improve the performance of the integrated circuit device? 2. What are the implications of the gate cut insulating portions on the overall efficiency of the device?
Original Abstract Submitted
An integrated circuit device includes fin-type active regions extending in a first lateral direction on a substrate, a device isolation film covering sidewalls of the fin-type active regions, a gate line on the fin-type active regions and the device isolation film, nanosheet stacks on a fin top surface of each of the fin-type active regions, each nanosheet stack including at least one nanosheet and being surrounded by the gate line, a gate cut insulating portion on the device isolation film and facing an end sidewall of the gate line in a second lateral direction, and a corner insulating spacer between a first nanosheet stack of the nanosheet stacks and the gate cut insulating portion and between the device isolation film and the gate line, the first nanosheet stack being closest to the gate cut insulating portion in the second lateral direction.
