18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
Contents
- 1 HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD
Organization Name
Inventor(s)
Ferdinando Iucolano of Gravina di Catania (IT)
Alfonso Patti of Tremestieri Etneo (IT)
Alessandro Chini of Modena (IT)
HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18530050 titled 'HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD
Simplified Explanation
The method described in the patent application is for forming a normally off HEMT transistor, which includes a semiconductor heterostructure with at least one first layer and one second layer, a trench extending through the layers, a gate region of conductive material in the trench, and a dielectric region coating the gate region and contacting the semiconductor heterostructure. A lateral structure forms at least one first step that delimits a part of the trench, with the semiconductor heterostructure forming a first edge and a second edge of the first step.
- Semiconductor heterostructure with at least one first layer and one second layer
- Trench extending through layers
- Gate region of conductive material in trench
- Dielectric region coating gate region and contacting semiconductor heterostructure
- Lateral structure forming at least one first step
- First edge and second edge of first step formed by semiconductor heterostructure
Potential Applications
This technology could be applied in:
- High-frequency communication devices
- Power amplifiers
- Radar systems
Problems Solved
- Improved performance of HEMT transistors
- Enhanced efficiency in high-frequency applications
Benefits
- Normally off type HEMT transistor
- Better control over device operation
- Increased reliability and stability
Potential Commercial Applications
- Enhanced HEMT Transistor Technology for High-Frequency Devices ###
Possible Prior Art
There may be prior art related to the formation of HEMT transistors using semiconductor heterostructures and trench structures, but specific examples are not provided in this abstract.
Unanswered Questions
How does this technology compare to existing HEMT transistor manufacturing methods?
This article does not provide a direct comparison to existing HEMT transistor manufacturing methods. Further research or a detailed analysis of the technology's advantages over current methods would be needed to answer this question.
What are the specific performance improvements achieved with this new method?
The abstract does not detail the specific performance improvements achieved with this new method. Additional information or data on the enhanced performance metrics would be necessary to answer this question accurately.
Original Abstract Submitted
A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
