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18529716. INTEGRATED CIRCUIT DEVICE (SAMSUNG ELECTRONICS CO., LTD.)

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INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minchul Ahn of Suwon-si (KR)

Yeonggil Kim of Suwon-si (KR)

Sungbin Park of Suwon-si (KR)

Deokyoung Jung of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE

This abstract first appeared for US patent application 18529716 titled 'INTEGRATED CIRCUIT DEVICE



Original Abstract Submitted

An integrated circuit device includes a backside insulating structure including an etch stop pattern, gate lines arranged over the backside insulating structure and each overlapping the etch stop pattern in a vertical direction, source/drain regions respectively arranged one-by-one between the gate lines, and a backside via contact passing through the etch stop pattern in the vertical direction and connected to a first source/drain region selected from the source/drain regions, wherein the backside via contact includes a stepped portion, which is apart from a first vertical level in the vertical direction by as much as a first distance and has a change in the width of the backside via contact in a horizontal direction at a second vertical level that is adjacent to the etch stop pattern, the first vertical level being closest to the plurality of gate lines in the backside insulating structure.