18528970. INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Integrated Circuit Device
- 1.13 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dongsung Choi of Suwon-si (KR)
Changheon Cheon of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18528970 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application describes an integrated circuit device with a unique channel structure that includes multiple insulating layers and a ferroelectric layer.
- The device has a semiconductor substrate with conductive lines overlapping in a vertical direction and separated by insulating layers.
- The channel structure consists of a core insulating layer, a channel layer, a gate insulating layer, and a ferroelectric layer.
- This design allows for efficient operation and control of the integrated circuit.
Key Features and Innovation
- Unique channel structure with multiple insulating layers.
- Incorporation of a ferroelectric layer for enhanced performance.
- Efficient operation and control of the integrated circuit.
Potential Applications
The technology can be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
- Improved performance and efficiency of integrated circuits.
- Enhanced control and operation of semiconductor devices.
Benefits
- Higher performance levels in integrated circuits.
- Increased efficiency in semiconductor manufacturing.
- Enhanced control and operation of electronic devices.
Commercial Applications
- Potential commercial uses include:
- Manufacturing of advanced electronic devices
- Development of high-performance integrated circuits
- Market implications include improved semiconductor technology and increased efficiency in electronics manufacturing processes.
Prior Art
Further research can be conducted in the field of semiconductor device design and integrated circuit structures to explore similar technologies and advancements.
Frequently Updated Research
Stay updated on the latest developments in semiconductor technology and integrated circuit design to enhance understanding and potential applications of this innovative channel structure.
Questions about Integrated Circuit Device
What are the potential applications of the unique channel structure in the semiconductor industry?
The unique channel structure can be applied in various semiconductor manufacturing processes to enhance performance and efficiency.
How does the incorporation of a ferroelectric layer improve the operation of the integrated circuit device?
The ferroelectric layer adds a unique functionality to the device, allowing for enhanced control and performance in semiconductor applications.
Original Abstract Submitted
An integrated circuit device includes a semiconductor substrate; a plurality of conductive lines extending on the semiconductor substrate in a horizontal direction and overlapping each other in a vertical direction; a plurality of insulating layers between pairs of conductive lines of the plurality of conductive lines and extending in the horizontal direction; and a channel structure passing through the plurality of conductive lines and the plurality of insulating layers, wherein the channel structure includes a core insulating layer, a channel layer on a side wall and a bottom surface of the core insulating layer, a gate insulating layer on an outer wall of the channel layer, and a ferroelectric layer on an outer wall of the gate insulating layer.
