18528451. WORD LINE CHARGE INTEGRATION simplified abstract (Micron Technology, Inc.)

WORD LINE CHARGE INTEGRATION

Organization Name

Micron Technology, Inc.

Inventor(s)

Ferdinando Bedeschi of Biassono (IT)

Umberto Di Vincenzo of Capriate San Gervasio (IT)

WORD LINE CHARGE INTEGRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18528451 titled 'WORD LINE CHARGE INTEGRATION

Simplified Explanation

The patent application describes methods, systems, and devices for integrating charges on word lines in memory devices. During a read operation, charges from memory cells are integrated by activating word lines and subsets of digit lines.

• Memory device includes multiple memory cells coupled with word line and digit lines
• Charges from memory cells are integrated by activating word lines and subsets of digit lines during read operation
• Sense components are activated to sense charges associated with memory cells after digit lines are selected

Key Features and Innovation

• Integration of charges on word lines in memory devices
• Efficient read operation process by activating word lines and digit lines
• Improved sensing of charges associated with memory cells

Potential Applications

• Memory devices in electronic devices
• Data storage systems
• Semiconductor industry

Problems Solved

• Efficient integration of charges on word lines
• Improved read operation process
• Enhanced sensing of charges in memory cells

Benefits

• Faster read operations
• Improved memory device performance
• Enhanced data storage capabilities

Commercial Applications

Word Line Charge Integration in Memory Devices

This technology can be applied in various memory devices used in electronic products, data storage systems, and the semiconductor industry. By optimizing the integration of charges on word lines, it can improve the efficiency and performance of memory devices, leading to better data storage capabilities and faster read operations.

Prior Art

Research on memory devices, charge integration methods, and read operation processes in the semiconductor industry can provide valuable insights into the development of this technology.

Frequently Updated Research

Stay updated on advancements in memory device technology, charge integration methods, and read operation processes in the semiconductor industry to understand the latest trends and innovations in this field.

Questions about Word Line Charge Integration

How does word line charge integration improve memory device performance?

Word line charge integration enhances memory device performance by optimizing the integration of charges on word lines, leading to faster read operations and improved data storage capabilities.

What are the potential applications of word line charge integration technology?

The potential applications of word line charge integration technology include memory devices in electronic products, data storage systems, and the semiconductor industry, where it can enhance memory device efficiency and performance.

Original Abstract Submitted

Methods, systems, and devices for word line charge integration are described. In some examples, a memory device may include a plurality of memory cells that are coupled with a word line and respective digit lines. During a read operation, the word line may be activated (e.g., driven to a voltage) and a subset of the respective digit lines may be activated (e.g., driven to a voltage) to begin integrating charges of each of the memory cells. Before each digit line is activated, the word line may be deactivated and the remaining digit lines may be activated (e.g., driven to a voltage) to begin integrating charges of the remaining memory cells that are coupled with the word line. After each of the digit lines are selected, respective sense components may be activated to sense the charges associated with the memory cells.