18528233. GATE DRIVING CIRCUIT simplified abstract (Samsung Display Co., LTD.)
Contents
GATE DRIVING CIRCUIT
Organization Name
Inventor(s)
Youngwan Seo of Yongin-si (KR)
GATE DRIVING CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18528233 titled 'GATE DRIVING CIRCUIT
Simplified Explanation: The patent application describes a gate driving circuit that minimizes leakage current in turned-off transistors, ensuring stable gate signals even when pull-down transistors output low-level voltages.
Key Features and Innovation:
- Two transistors in series are used in the circuit to reduce leakage current in the off state.
- Capacitors are included to further reduce leakage current and improve voltage control at nodes.
- Stable control of output gate and carry voltages is achieved.
Potential Applications: The technology can be applied in various electronic devices requiring stable gate signals, such as integrated circuits, microcontrollers, and power management systems.
Problems Solved: The technology addresses the issue of leakage current in turned-off transistors, which can lead to unstable gate signals and unreliable performance in electronic circuits.
Benefits: The benefits of this technology include improved reliability, stable operation, and better control of output voltages in electronic devices.
Commercial Applications: Potential commercial applications include the semiconductor industry, consumer electronics manufacturing, and automotive electronics for improved performance and reliability.
Prior Art: Readers can start searching for prior art related to this technology in the field of semiconductor device design, gate driving circuits, and leakage current reduction techniques.
Frequently Updated Research: Researchers may find relevant studies on semiconductor device design, leakage current reduction, and gate driving circuit optimization that could further enhance this technology.
Questions about Gate Driving Circuit Technology: 1. What are the primary challenges in minimizing leakage current in gate driving circuits? 2. How does the inclusion of capacitors help reduce leakage current in the described technology?
Original Abstract Submitted
A gate driving circuit from which stable gate signals may be output by minimizing a leakage current of turned-off transistors in case that pull-down transistors output a gate signal and a carry signal of a low-level voltage. Some transistors in the gate driving circuit include two transistors in series to reduce leakage current in an off state, and capacitors are further included to reduce leakage current. Therefore voltages at nodes can be better controlled, and so that the output gate and carry voltages can be stably controlled.
