18527453. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Moonseung Yang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18527453 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The patent application describes an integrated circuit device with a unique structure for the source/drain region, improving performance and efficiency.
- The integrated circuit device includes a fin-type active region on a substrate.
- At least one nanosheet is present with a bottom surface facing the fin top.
- A gate line is located on the fin-type active region.
- The source/drain region is adjacent to the gate line and in contact with the nanosheet.
- The source/drain region consists of a lower main body layer and an upper main body layer.
- The lower main body layer has a lower facet declining towards the substrate, while the upper main body layer has an upper facet.
- The lower facet and upper facet intersect at specific lines in a vertical cross-section.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This innovation addresses the need for improved performance and efficiency in integrated circuit devices by optimizing the structure of the source/drain region.
Benefits
- Enhanced performance and efficiency of integrated circuit devices. - Potential for smaller and more powerful electronic devices. - Improved reliability and longevity of electronic components.
Potential Commercial Applications
The technology could be utilized in the semiconductor industry for the production of next-generation integrated circuits, leading to advancements in consumer electronics and other high-tech devices.
Possible Prior Art
Prior art may include patents or publications related to semiconductor device structures and fabrication processes, particularly those focusing on source/drain regions and nanosheet technology.
Unanswered Questions
How does this technology compare to existing source/drain region structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing source/drain region structures to evaluate the performance and efficiency improvements offered by this innovation.
What specific electronic devices or applications could benefit the most from this technology?
The article does not specify which electronic devices or applications could see the greatest advantages from implementing this technology.
Original Abstract Submitted
An integrated circuit device includes a fin-type active region on a substrate; at least one nanosheet having a bottom surface facing the fin top; a gate line on the fin-type active region; and a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet, wherein the source/drain region includes a lower main body layer and an upper main body layer, a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region, and the upper main body layer includes a bottom surface contacting the lower facet and a top surface having an upper facet. With respect to a vertical cross section, the lower facet extends along a corresponding first line and the upper facet extends along a second line that intersects the first line.
