18527450. SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR MEMORY DEVICES
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SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18527450 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor memory device described in the abstract includes a substrate with a memory cell region and multiple capacitor structures within that region. Each capacitor structure consists of a lower electrode, a capacitor dielectric layer, and an upper electrode. The lower electrode is made up of a first lower electrode, a second lower electrode above the first one, and a connecting lower electrode that links the two. The upper electrode is a bent structure that overlaps the connecting lower electrode horizontally.
- The memory device features a unique capacitor structure with multiple layers for efficient storage.
- The lower electrode design allows for improved connectivity and performance.
- The bent upper electrode enhances the overall functionality of the capacitor structure.
- This innovation aims to enhance the performance and storage capacity of semiconductor memory devices.
- The design of the capacitor structures is optimized for maximum efficiency and reliability.
Potential Applications: This technology can be applied in various electronic devices requiring high-speed and high-capacity memory storage, such as smartphones, computers, and servers.
Problems Solved: This innovation addresses the need for improved memory storage solutions in semiconductor devices, enhancing performance and reliability.
Benefits: The semiconductor memory device with this unique capacitor structure offers increased storage capacity, improved performance, and enhanced reliability for electronic devices.
Commercial Applications: This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced memory storage solutions for consumer electronics and data centers.
Questions about Semiconductor Memory Device: 1. How does the unique capacitor structure in this semiconductor memory device improve performance? 2. What are the potential applications of this technology beyond consumer electronics?
Frequently Updated Research: Researchers are continually exploring ways to optimize memory storage solutions in semiconductor devices, with a focus on improving speed, capacity, and reliability.
Original Abstract Submitted
A semiconductor memory device includes a substrate having a memory cell region and a plurality of capacitor structures in the memory cell region of the substrate, each of the plurality of capacitor structures including a lower electrode, a capacitor dielectric layer, and an upper electrode, wherein the lower electrode includes a first lower electrode, a second lower electrode above the first lower electrode, and a connecting lower electrode connecting a top end of the first lower electrode to a bottom end of the second lower electrode, wherein the upper electrode includes a bent upper electrode overlapping the connecting lower electrode in a horizontal direction, and the bent upper electrode includes a bent portion.
