18526322. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Junghyun Kim of Suwon-si (KR)

Jonghoon Park of Suwon-si (KR)

Yunki Lee of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526322 titled 'IMAGE SENSOR

The abstract describes an image sensor with a 2*2 structure consisting of four unit pixels forming a shared pixel, isolated by a Deep Trench Isolation (DTI) structure. The DTI structure includes an inner DTI structure within the shared pixel and an outer DTI structure surrounding it. The inner DTI structure comprises a first DTI structure passing through the center of the shared pixel in two directions and a second DTI structure extending towards the center in a perpendicular direction. A DTI Center Cut (DCC) region is present between the first and second DTI structures.

  • Image sensor with a 2*2 structure and shared pixel
  • Deep Trench Isolation (DTI) structure isolating unit pixels
  • Inner DTI structure within the shared pixel
  • Outer DTI structure surrounding the shared pixel
  • DTI Center Cut (DCC) region between inner and outer DTI structures

Potential Applications: - High-resolution imaging devices - Digital cameras - Mobile devices with camera capabilities

Problems Solved: - Improved image quality - Enhanced pixel isolation - Reduction of crosstalk between pixels

Benefits: - Sharper images - Reduced noise in photos - Enhanced color accuracy

Commercial Applications: Title: Advanced Image Sensors for High-Resolution Cameras This technology can be utilized in the development of high-quality cameras for various commercial applications such as smartphones, security cameras, and medical imaging devices.

Questions about the technology: 1. How does the DTI structure improve pixel isolation in the image sensor? 2. What are the potential market implications of implementing this advanced image sensor technology?


Original Abstract Submitted

An image sensor may include four unit pixels constituting a shared pixel in a 2*2 structure; and a Deep Trench Isolation (DTI) structure isolating the four unit pixels from each other. The DTI structure may include an inner DTI structure inside the shared pixel and an outer DTI structure surrounding the shared pixel. The inner DTI structure may include a first DTI structure passing through a center of the shared pixel and extending in a first direction or a second direction and a second DTI structure extending toward the center of the shared pixel in a direction perpendicular to a direction in which the first DTI structure extends. The shared pixel may include a DTI Center Cut (DCC) region between the first DTI structure and the second DTI structure in a direction in which the second DTI structure extends.