18526057. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing solutions in terms of performance and cost-effectiveness?
- 1.9.3 What are the specific manufacturing processes involved in implementing this technology, and how do they contribute to the final product's quality and reliability?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chen-Shien Chen of Zhubei City (TW)
Ting-Li Yang of Tainan City (TW)
Po-Hao Tsai of Taoyuan City (TW)
Ming-Da Cheng of Taoyuan City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526057 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device with multiple layers and redistribution lines for improved connectivity and functionality.
- Passivation layer on a semiconductor substrate
- First redistribution line and second redistribution line extending along the passivation layer
- First dielectric layer covering the redistribution lines and passivation layer
- Under bump metallization with bump portion and first via portion for coupling to the redistribution lines
Potential Applications
This technology could be applied in semiconductor devices, integrated circuits, and electronic components requiring high-density interconnects.
Problems Solved
This innovation solves the problem of limited connectivity and space constraints in semiconductor devices, enabling more efficient and reliable performance.
Benefits
The benefits of this technology include improved signal transmission, reduced signal interference, increased device reliability, and enhanced overall performance.
Potential Commercial Applications
The potential commercial applications of this technology could be in the fields of telecommunications, consumer electronics, automotive electronics, and industrial automation.
Possible Prior Art
One possible prior art for this technology could be the use of similar multi-layer structures in semiconductor devices for improved connectivity and functionality.
Unanswered Questions
How does this technology compare to existing solutions in terms of performance and cost-effectiveness?
This article does not provide a direct comparison with existing solutions in terms of performance and cost-effectiveness.
What are the specific manufacturing processes involved in implementing this technology, and how do they contribute to the final product's quality and reliability?
The article does not delve into the specific manufacturing processes involved in implementing this technology and their impact on the final product's quality and reliability.
Original Abstract Submitted
In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
