18526031. MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 MEMORY DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Memory Devices
- 1.12 Original Abstract Submitted
MEMORY DEVICES
Organization Name
Inventor(s)
Hyunchul Sohn of Suwon-si (KR)
Kwangmin Park of Suwon-si (KR)
Jinmyung Choi of Suwon-si (KR)
MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18526031 titled 'MEMORY DEVICES
Simplified Explanation
The memory device described in the patent application consists of a substrate with multiple first conductive lines in one direction and second conductive lines crossing them in another direction. Each memory cell includes a switching device and a variable resistance material pattern, with the switching device made of a specific composition of LaNiO.
- The memory device has a unique structure with first and second conductive lines intersecting to form memory cells.
- Each memory cell contains a switching device and a variable resistance material pattern.
- The switching device is composed of LaNiO with specific ranges of composition for x and y.
Potential Applications
- This technology can be used in various memory storage applications, such as non-volatile memory devices.
- It can also find applications in data storage systems, electronic devices, and computing systems.
Problems Solved
- The technology provides a more efficient and reliable memory storage solution.
- It addresses the need for high-density memory devices with improved performance.
Benefits
- Enhanced memory storage capacity and performance.
- Increased reliability and efficiency in data storage.
- Potential for cost-effective memory solutions.
Commercial Applications
LaNiO-based Memory Devices for High-Density Data Storage This technology can revolutionize the memory storage industry by offering high-density data storage solutions for various electronic devices, leading to improved performance and reliability.
Prior Art
There is no specific information provided about prior art related to this technology in the patent application.
Frequently Updated Research
There is no information available on frequently updated research relevant to this technology.
Questions about Memory Devices
Question 1
How does the composition of LaNiO in the switching device impact the performance of the memory cells?
The composition of LaNiO in the switching device affects the conductivity and stability of the memory cells, influencing their overall performance and reliability.
Question 2
What are the potential challenges in scaling up this memory device for commercial production?
Scaling up this memory device for commercial production may face challenges related to manufacturing processes, cost-effectiveness, and integration into existing systems.
Original Abstract Submitted
A memory device includes a substrate; a plurality of first conductive lines on the substrate and extending in a first direction; a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction crossing the first direction; and a plurality of first memory cells respectively arranged between the plurality of first conductive lines and the plurality of second conductive lines, wherein each first memory cell of the plurality of first memory cells includes a switching device and a variable resistance material pattern, and the switching device includes a material having a composition of LaNiO, in which 0.13≤x≤0.30 and 0.9≤y≤1.5.
