18525633. 3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS simplified abstract (Applied Materials, Inc.)
Contents
- 1 3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about 3D NAND Flash Memory Fabrication Technology
- 1.13 Original Abstract Submitted
3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS
Organization Name
Inventor(s)
HsiangYu Lee of Cupertino CA (US)
Pradeep Subrahmanyan of Cupertino CA (US)
Changwoo Sun of San Jose CA (US)
3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525633 titled '3D MEMORY INCLUDING HOLLOW EPITAXIAL CHANNELS
Simplified Explanation
The patent application describes a method for fabricating 3D NAND flash memory structures with hollow epitaxial channels.
- Forming alternating material layers in a vertical stack on a substrate.
- Etching a channel hole through the material layers to the substrate.
- Creating a tunneling layer around the channel hole.
- Growing a hollow epitaxial silicon core through the channel hole.
Key Features and Innovation
- Formation of hollow epitaxial channels in 3D NAND flash memory structures.
- Utilization of tunneling layers and core gap materials for channel formation.
- Epitaxial growth of hollow silicon cores within the channels.
Potential Applications
- Memory storage devices.
- Solid-state drives.
- Data centers.
Problems Solved
- Increasing memory storage capacity in a smaller footprint.
- Enhancing data transfer speeds.
- Improving overall performance of NAND flash memory.
Benefits
- Higher memory density.
- Faster data access.
- Enhanced reliability and longevity.
Commercial Applications
3D NAND Flash Memory Fabrication Technology for Improved Data Storage
This technology can revolutionize the data storage industry by enabling higher capacity and faster NAND flash memory devices. It can be applied in various commercial sectors such as consumer electronics, enterprise storage solutions, and cloud computing services.
Prior Art
For prior art related to this technology, researchers can explore patents and publications in the field of semiconductor memory devices, specifically focusing on 3D NAND flash memory fabrication methods and structures.
Frequently Updated Research
Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of 3D NAND flash memory devices. Stay updated on the latest advancements in semiconductor manufacturing and memory storage technologies.
Questions about 3D NAND Flash Memory Fabrication Technology
What are the key advantages of using hollow epitaxial channels in 3D NAND flash memory structures?
Hollow epitaxial channels allow for increased memory density and faster data access speeds due to their unique structure.
How does the epitaxial growth of hollow silicon cores contribute to the overall performance of the memory device?
The epitaxial growth of hollow silicon cores ensures precise alignment and uniformity within the channels, leading to improved data storage and retrieval capabilities.
Original Abstract Submitted
Disclosed are approaches for fabricating 3D NAND flash memory structures including hollow epitaxial channels. One approach for fabricating a 3D NAND memory structure may include forming a plurality of alternating material layers arranged in a vertical stack on a substrate, etching a channel hole that extends through the plurality of alternating material layers to the substrate, and forming a tunneling layer around the channel hole contacting the plurality of alternating material layers. The method may further include forming a channel liner along the tunneling layer, forming a core gap material within the channel liner, removing the channel liner from the channel hole, and epitaxially growing a hollow epitaxial silicon core from the substrate through the channel hole, between the tunneling layer and the core gap material.
