18525521. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Cheng-Lung Hung of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18525521 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes methods for tuning effective work functions of gate electrodes in semiconductor devices. A semiconductor device is formed with a gate electrode that includes a first work function metal layer, a first work function tuning layer, and a fill material.
- The gate electrode in the semiconductor device includes a first work function metal layer made of aluminum.
- A first work function tuning layer, consisting of aluminum tungsten (AlW), is placed over the first work function metal layer.
- A fill material is then added over the first work function tuning layer.
Potential Applications
The technology described in the patent application can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
Problems Solved
This technology addresses the challenge of tuning the work functions of gate electrodes in semiconductor devices to optimize their performance and efficiency.
Benefits
The use of the described methods can lead to improved functionality and reliability of semiconductor devices, enhancing their overall performance.
Potential Commercial Applications
The technology has potential applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art in this field could be the use of different metal layers and tuning materials in gate electrodes of semiconductor devices to adjust their work functions.
Unanswered Questions
How does this technology compare to existing methods for tuning work functions in semiconductor devices?
The article does not provide a direct comparison between this technology and existing methods for tuning work functions in semiconductor devices.
What are the specific performance improvements that can be achieved by using this technology in semiconductor devices?
The article does not detail the specific performance improvements that can be achieved by implementing this technology in semiconductor devices.
Original Abstract Submitted
Methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (Al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (AlW); and a fill material over the first work function tuning layer.
